BSS79C Fairchild Semiconductor, BSS79C Datasheet
BSS79C
Manufacturer Part Number
BSS79C
Description
TRANSISTOR NPN 40V SOT-23
Manufacturer
Fairchild Semiconductor
Datasheet
1.BSS79C.pdf
(4 pages)
Specifications of BSS79C
Transistor Type
NPN
Current - Collector (ic) (max)
800mA
Voltage - Collector Emitter Breakdown (max)
40V
Vce Saturation (max) @ Ib, Ic
1V @ 50mA, 500mA
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 150mA, 10V
Power - Max
350mW
Frequency - Transition
250MHz
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Configuration
Single
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
40 V
Emitter- Base Voltage Vebo
6 V
Continuous Collector Current
0.8 A
Maximum Dc Collector Current
0.8 A
Power Dissipation
350 mW
Maximum Operating Frequency
250 MHz
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
100
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BSS79C
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Part Number:
BSS79C-NL
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
©2004 Fairchild Semiconductor Corporation
NPN General Purpose Amplifier
• This device is for use as a medium power amplifier and swith requiring
• Sourced from process 19.
• See BCW65C for characteristics.
Absolute Maximum Ratings *
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics
V
V
V
I
T
Off Characteristics
V
V
V
I
I
On Characteristics *
h
V
Small Signal Characteristics
f
C
Switching Characteristics
t
t
t
t
C
CBO
EBO
T
d
r
s
f
Symbol
collector currents up to 500mA.
FE
J
(BR)CEO
(BR)CBO
(BR)EBO
CE(sat)
CEO
CBO
EBO
CB
, T
Symbol
STG
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Cutoff Current
Emitter-Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Current Gain - Bandwidth Product
Collector-Base Capacitance
Delay Time
Rise Time
Storage Time
Fall Time
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Operating and Storage Junction Temperature Range
Parameter
T
Parameter
a
=25 C unless otherwise noted
T
a
=25 C unless otherwise noted
- Continuous
BSS79C
I
I
I
V
V
V
I
I
I
I
V
V
I
V
I
C
C
E
C
C
C
C
C
B1
CB
CB
EB
CB
CC
CC
= 10 A, I
= 10mA, I
= 10 A, I
= 150mA, V
= 150mA, I
= 500mA, I
= 20mA, V
= 150mA, I
= I
= 60V
= 60V, T
= 3.0V, I
= 10V, I
= 30V, V
= 30V, I
B2
= 15mA
C
E
B
E
Test Condition
C
a
C
CE
BE(OFF)
= 0
= 0
B
B
B1
= 0
= 0, f = 1.0MHz
= 150
CE
= 150mA,
= 0
= 15mA
= 50mA
= 20V, f = 100MHz
= 15mA
= 10V
C
= 0.5V,
-55 ~ +150
Value
800
6.0
40
75
C
Min.
100
6.0
75
40
B
Max.
300
250
265
0.3
1.0
8.0
10
10
10
10
10
60
SOT-23
Mark: CF
Units
mA
E
V
V
V
Rev. A, June 2004
C
Units
MHz
nA
nA
pF
ns
ns
ns
ns
V
V
V
V
V
A
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BSS79C Summary of contents
Page 1
... Small Signal Characteristics f Current Gain - Bandwidth Product T C Collector-Base Capacitance CB Switching Characteristics t Delay Time d t Rise Time r t Storage Time s t Fall Time f ©2004 Fairchild Semiconductor Corporation BSS79C T =25 C unless otherwise noted a Parameter - Continuous T =25 C unless otherwise noted a Test Condition I = 10mA ...
Page 2
... Thermal Characteristics Symbol P Total Device Dissipation D Derate above Thermal Resistance, Junction to Ambient JA * Device mounted on FR-4 PCB 400mm 40mm ©2004 Fairchild Semiconductor Corporation T =25 C unless otherwise noted a Parameter 1.5mm Max. Units 350 mW 2.8 mW/ C 357 C/W Rev. A, June 2004 ...
Page 3
... Package Dimensions 0.40 0.03 2.90 0.95 0.03 1.90 ©2004 Fairchild Semiconductor Corporation SOT-23 0.40 0.03 0.96~1.14 0.10 0.95 0.03 0.508REF 0.03 0.03~0.10 0.38 REF +0.05 0.12 –0.023 Dimensions in Millimeters Rev. A, June 2004 ...
Page 4
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ® A FAST CEx™ FASTr™ ActiveArray™ FPS™ Bottomless™ FRFET™ CoolFET™ CROSSVOLT™ GlobalOptoisolator™ ...