BSV52 Fairchild Semiconductor, BSV52 Datasheet - Page 3
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BSV52
Manufacturer Part Number
BSV52
Description
TRANSISTOR NPN 12V 200MA SOT-23
Manufacturer
Fairchild Semiconductor
Datasheet
1.BSV52.pdf
(7 pages)
Specifications of BSV52
Transistor Type
NPN
Current - Collector (ic) (max)
200mA
Voltage - Collector Emitter Breakdown (max)
12V
Vce Saturation (max) @ Ib, Ic
400mV @ 5mA, 50mA
Dc Current Gain (hfe) (min) @ Ic, Vce
40 @ 10mA, 1V
Power - Max
225mW
Frequency - Transition
400MHz
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Configuration
Single
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
12 V
Emitter- Base Voltage Vebo
5 V
Continuous Collector Current
0.2 A
Maximum Dc Collector Current
0.2 A
Power Dissipation
225 mW
Maximum Operating Frequency
400 MHz
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
40
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
BSV52
BSV52TR
BSV52TR
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Typical Characteristics
200
150
100
1.4
1.2
0.8
0.6
0.4
50
0.01
1
0.1
Voltage vs Collector Current
V
- 40 °C
Base-Emitter Saturation
C E
25 °C
125 °C
I
vs Collector Current
I
= 1.0V
C
C
= 10
- COLLE CTOR CURRENT ( mA)
DC Current Gain
- COLLECTOR CURRENT (mA)
0.1
1
25 ° C
1
125 ° C
10
- 40 °C
600
100
10
1
25
10
V
CB
vs Ambient Temperature
Collector-Cutoff Current
100
= 20V
T - AMBIENT TE MPERATURE ( C)
50
A
100
300
75
100
0.8
0.6
0.4
0.2
0.5
0.4
0.3
0.2
0.1
1
0
0.1
0.1
Voltage vs Collector Current
Collector-Emitter Saturation
- 40 °C
125
Base-Emitter ON Voltage vs
°
= 10
25 °C
I
- 40°C
I
C
NPN Switching Transistor
C
- COLLECTOR CURRENT (mA)
Collector Current
- COLLECTOR CURRENT (mA)
1
150
1
25 °C
125 °C
10
125 °C
10
100
V
CE
= 1.0V
(continued)
500
100