MMBT200 Fairchild Semiconductor, MMBT200 Datasheet - Page 3

• Manufacturer Part Number: MMBT200
• Description: TRANSISTOR PNP GP SOT-23
• Manufacturer: Fairchild Semiconductor

Specifications of MMBT200

• Transistor Type: PNP
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 45V
• Vce Saturation (max) @ Ib, Ic: 400mV @ 20mA, 200mA
• Current - Collector Cutoff (max): 50nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 150mA, 1V
• Power - Max: 350mW
• Frequency - Transition: 250MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Configuration: Single
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 45 V
• Emitter- Base Voltage Vebo: - 6 V
• Continuous Collector Current: 0.5 A
• Maximum Dc Collector Current: 0.5 A
• Power Dissipation: 350 mW
• Maximum Operating Frequency: 250 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 100
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Qualification Stress Test and Sample Size Detail
Device #1 2N7002
Package:
006
#Leads:
Precondition Description:
Pg. 3