BSR15 Fairchild Semiconductor, BSR15 Datasheet - Page 2

• Manufacturer Part Number: BSR15
• Description: IC AMP PNP 40V 800MA SOT-23
• Manufacturer: Fairchild Semiconductor

Specifications of BSR15

• Transistor Type: PNP
• Current - Collector (ic) (max): 800mA
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 1.6V @ 50mA, 500mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 150mA, 10V
• Power - Max: 350mW
• Frequency - Transition: 200MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Configuration: Single
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 40 V
• Emitter- Base Voltage Vebo: - 5 V
• Continuous Collector Current: 0.8 A
• Maximum Dc Collector Current: 0.8 A
• Power Dissipation: 350 mW
• Maximum Operating Frequency: 200 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 100
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

©2002 Fairchild Semiconductor Corporation
Electrical Characteristics
Thermal Characteristics
* Device mounted on FR-4 PCB 40mm
Off Characteristics
BV
BV
BV
I
I
I
On Characteristics
h
V
V
Small Signal Characteristics
f
C
C
Switching Characteristics
t
t
t
t
t
t
P
R
CBO
CEX
BEX
T
on
d
r
off
s
f
FE
Symbol
CE
BE
D
cb
eb
Symbol
JA
(BR)CEO
(BR)CBO
(BR)EBO
(sat)
(sat)
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Collector Cut-off Current
Reverse Base Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
Emitter-Base Capacitance
Turn-On Time
Delay Time
Rise Time
Turn-Off Time
Storage Time
Fall Time
Total Device Dissipation
Derate above 25 C
Thermal Resistance, Junction to Ambient
Parameter
40mm
1.5mm
Parameter
T
A
T
=25 C unless otherwise noted
a
=25 C unless otherwise noted
I
I
I
I
I
I
I
V
V
V
V
I
I
I
I
I
I
f = 100MHz, T
V
V
V
I
V
I
C
C
E
C
C
C
C
C
C
C
C
C
C
B1
B1
CB
CB
CE
CE
CB
CB
CC
CC
= -10mA, I
= -100 A, I
= -10 A, I
= -0.1mA, V
= -1.0mA, V
= -10mA, V
= -150mA, V
= -500mA, V
= -150mA, I
= -500mA, I
= -150mA, I
= -500mA, I
= -50mA, V
= -15mA
= I
= -50V
= -50V, T
= -10V, I
= -2.0V, I
= -30V, V
= -30V, V
= -30V, I
= -30V, I
B2
Test Condition
= -15mA
C
B
E
C
C
E
A
E
EB
EB
CE
CE
B
B
B
B
A
= 0
CE
CE
= 0
= 0, f = 1.0MHz
CE
CE
= 0, f = 1.0MHz
= -150mA,
= -150mA,
= 0
= 150 C
= -15mA
= -50mA
= -15mA
= -50mA
= 25 C
= -10V
= -20V,
= -0.5V
= -3.0V
= -10V
= -10V
= -10V
= -10V
Max.
350
357
2.8
Min.
-5.0
100
200
-40
-60
35
50
75
30
Typ.
300
Max.
-0.4
-1.6
-1.3
-2.6
100
mW/ C
-20
-20
-50
-50
8.0
30
45
10
40
80
30
Units
mW
C/W
Rev. B1, July 2002
Units
MHz
nA
nA
nA
pF
pF
ns
ns
ns
ns
ns
ns
V
V
V
V
V
V
V
A