MMBT2222 Fairchild Semiconductor, MMBT2222 Datasheet
MMBT2222
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MMBT2222 Summary of contents
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... Emitter-Base Breakdown Voltage (BR)EBO I Collector Cutoff Current CBO I Emitter Cutoff Current EBO On Characteristics h DC Current Gain FE V Collector-Emitter Saturation Voltage * CE(sat) V Base-Emitter Saturation Voltage BE(sat) ©2004 Fairchild Semiconductor Corporation MMBT2222 T =25 C unless otherwise noted a Parameter - Continuous T =25 C unless otherwise noted a Test Condition I = 10mA ...
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... Pulse Test: Pulse Width 300 s, Duty Cycle Thermal Characteristics Symbol P Total Device Dissipation D Derate above Thermal Resistance, Junction to Ambient JA * Device mounted on FR-4PCB 1.6” 1.6” 0.06”. ©2004 Fairchild Semiconductor Corporation (Continued) T =25 C unless otherwise noted a Test Condition I = 20mA 20V 100MHz 10V 1MHz CB ...
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... Package Dimensions 0.40 0.03 2.90 0.95 0.03 1.90 ©2004 Fairchild Semiconductor Corporation SOT-23 0.40 0.03 0.96~1.14 0.10 0.95 0.03 0.508REF 0.03 0.03~0.10 0.38 REF +0.05 0.12 –0.023 Dimensions in Millimeters Rev. B, May 2004 ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ® A FAST CEx™ FASTr™ ActiveArray™ FPS™ Bottomless™ FRFET™ CoolFET™ CROSSVOLT™ GlobalOptoisolator™ ...