MMBT5210 Fairchild Semiconductor, MMBT5210 Datasheet - Page 3
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MMBT5210
Manufacturer Part Number
MMBT5210
Description
TRANSISTOR NPN GP SOT-23
Manufacturer
Fairchild Semiconductor
Datasheet
1.2N5210BU.pdf
(7 pages)
Specifications of MMBT5210
Transistor Type
NPN
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Vce Saturation (max) @ Ib, Ic
700mV @ 1mA, 10mA
Dc Current Gain (hfe) (min) @ Ic, Vce
200 @ 100µA, 5V
Power - Max
350mW
Frequency - Transition
30MHz
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Transistor Polarity
NPN
Number Of Elements
1
Collector-emitter Voltage
50V
Collector-base Voltage(max)
50V
Emitter-base Voltage (max)
4.5V
Collector Current (dc) (max)
100mA
Dc Current Gain (min)
200
Power Dissipation
350mW
Frequency (max)
30MHz
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Package Type
SOT-23
Configuration
Single
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
50 V
Emitter- Base Voltage Vebo
4.5 V
Continuous Collector Current
0.5 A
Maximum Dc Collector Current
0.1 A
Maximum Operating Frequency
30 MHz
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
200
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Qualification Stress Test and Sample Size Detail
Device #1 2N7002
Package:
006
#Leads:
Precondition Description:
Pg. 3