MMBT100 Fairchild Semiconductor, MMBT100 Datasheet - Page 3

• Manufacturer Part Number: MMBT100
• Description: TRANSISTOR NPN GP SOT-23
• Manufacturer: Fairchild Semiconductor

Specifications of MMBT100

• Transistor Type: NPN
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 45V
• Vce Saturation (max) @ Ib, Ic: 400mV @ 20mA, 200mA
• Current - Collector Cutoff (max): 50nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 150mA, 5V
• Power - Max: 350mW
• Frequency - Transition: 250MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 45 V
• Emitter- Base Voltage Vebo: 6 V
• Continuous Collector Current: 0.5 A
• Maximum Dc Collector Current: 0.5 A
• Power Dissipation: 350 mW
• Maximum Operating Frequency: 250 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 100
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 1
• Collector-emitter Voltage: 45V
• Collector-base Voltage: 75V
• Emitter-base Voltage: 6V
• Collector Current (dc) (max): 500mA
• Dc Current Gain (min): 80
• Frequency (max): 250MHz
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SOT-23
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

PN100/PN100A/MMBT100/MMBT100A Rev. C1
© 2008 Fairchild Semiconductor Corporation
Typical Characteristics
400
300
200
100
0.1
0.8
0.6
0.4
0.2
10
0
1
1
10
0.1
25
Figure 3. Base-Emitter Saturation Voltage
Figure 1. Typical Pulsed Current Gain
Voltage vs Collector Current
V
Figure 5. Collector Cutoff Current
CB
- 40 °C
Base-Emitter Saturation
= 60V
20
vs Collector Current
T - AMBIE NT TEMP ERATURE ( C)
I - COLLECTOR CURRENT (mA)
vs Ambient Temperature
I - COLLECTOR CURRENT (mA)
50
C
A
C
vs Collector Current
vs Collector Current
125 °C
- 40 °C
30
1
75
25 °C
50
25 °C
10
100
100
125 °C
200 300
β = 10
125
°
Vce = 5V
100
300
150
500
3
0.8
0.6
0.4
0.2
0.4
0.3
0.2
0.1
100
Figure 2. Collector-Emitter Saturation Voltage
1
0.1
10
1
0.1
1
Figure 6. Input and Output Capacitance
Figure 4. Base-Emitter On Voltage
Voltage vs Collector Current
1
β = 10
- 40 °C
I - COLLECTOR CURRENT (mA)
C
I - COLLECTOR CURRENT (mA)
V
C
Collector Current
ce
vs Collector Current
vs Collector Current
vs Reverse Voltag
V
- COLLECTOR VOLTAGE (V)
CE
1
10
= 5V
25 °C
10
125 °C
25 °C
125 °C
Cib
10
100
f = 1.0 MHz
100
- 40 °C
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Cob
400
100
500