FJX3904TF Fairchild Semiconductor, FJX3904TF Datasheet - Page 2

• Manufacturer Part Number: FJX3904TF
• Description: TRANSISTOR NPN 40V 200MA SOT-323
• Manufacturer: Fairchild Semiconductor

Specifications of FJX3904TF

• Transistor Type: NPN
• Current - Collector (ic) (max): 200mA
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 5mA, 50mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 10mA, 1V
• Power - Max: 350mW
• Frequency - Transition: 300MHz
• Mounting Type: Surface Mount
• Package / Case: SC-70-3, SOT-323-3
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 40 V
• Emitter- Base Voltage Vebo: 6 V
• Maximum Dc Collector Current: 0.2 A
• Power Dissipation: 350 mW
• Maximum Operating Frequency: 300 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 100
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

FJX3904 Rev. B
Package Marking and Ordering Information
Note : The Suffix “-TF” means Tape& Reel packing method, which can be on fairchildsemi website at http://www.fairchildsemi.com/packaging
Typical Performance Characteristics
Device Item
FJX3904TF
6
5
4
3
2
1
0
240
200
160
120
80
40
1
0
0.1
(note)
Figure 3. Output Capacitance
V
Figure 1. DC current Gain
CB
[V], COLLECTOR-BASE VOLTAGE
I
C
[A], COLLECTOR CURRENT
1
Device Marking
S1A
10
10
I
f = 1MHz
E
= 0
V
CE
100
= 1V
100
Package
SOT-323
2
Figure 4. Current Gain Bandwidth Product
Figure 2. Base-Emitter Saturation Voltage
0.01
0.1
10
1000
1
100
0.1
Collector-Emitter Saturation Voltage
10
0.1
I
C
= 10 I
Packing Method
V
V
V
CE
CE
B
BE
(sat)
TAPE & REEL
I
(sat)
C
= 20V
I
[mA], COLLECTOR CURRENT
C
[mA], COLLECTOR CURRENT
1
1
10
10
Qty(pcs)
www.fairchildsemi.com
3,000
100
100