MMBT5551 Fairchild Semiconductor, MMBT5551 Datasheet

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MMBT5551

Manufacturer Part Number
MMBT5551
Description
TRANSISTOR NPN 160V SOT-23
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of MMBT5551

Transistor Type
NPN
Current - Collector (ic) (max)
600mA
Voltage - Collector Emitter Breakdown (max)
160V
Vce Saturation (max) @ Ib, Ic
200mV @ 5mA, 50mA
Dc Current Gain (hfe) (min) @ Ic, Vce
80 @ 10mA, 5V
Power - Max
350mW
Frequency - Transition
100MHz
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Configuration
Single
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
160 V
Emitter- Base Voltage Vebo
6 V
Continuous Collector Current
0.6 A
Maximum Dc Collector Current
0.6 A
Power Dissipation
350 mW
Maximum Operating Frequency
300 MHz
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
80
Minimum Operating Temperature
- 55 C
Number Of Elements
1
Collector-emitter Voltage
160V
Collector-base Voltage
180V
Emitter-base Voltage
6V
Collector Current (dc) (max)
600mA
Dc Current Gain (min)
80
Frequency (max)
300MHz
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Package Type
SOT-23
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
MMBT5551FSTR

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2N5551 / MMBT5551 Rev. B1
© 2009 Fairchild Semiconductor Corporation
2N5551 / MMBT5551
NPN General Purpose Amplifier
Features
• This device is designed for general purpose high voltage amplifiers and gas discharge display drivers.
• Suffix “-C” means Center Collector in 2N5551 (1. Emitter 2. Collector 3. Base)
• Suffix “-Y” means h
Absolute Maximum Ratings *
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
* Device mounted on FR-4 PCB 1.6" × 1.6" × 0.06."
Symbol
Symbol
R
R
T
P
V
V
V
J
θJC
θJA
, T
D
CEO
CBO
EBO
I
C
stg
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector current - Continuous
Junction and Storage Temperature
FE
180~240 in 2N5551 (Test condition : I
Parameter
2N5551
Parameter
T
A
=25°C unless otherwise noted
TO-92
T
A
= 25°C unless otherwise noted
1
C
= 10mA, V
2N5551
83.3
625
200
5.0
1. Base 2. Emitter 3. Collector
MMBT5551
3
-55 to +150
CE
Value
Max
160
180
600
6.0
= 5.0V)
*MMBT5551
1
SOT-23
Marking: 3S
357
350
2.8
2
www.fairchildsemi.com
mW/°C
Units
Units
°C/W
°C/W
June 2009
mW
mA
°C
V
V
V

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MMBT5551 Summary of contents

Page 1

... Derate above 25°C R Thermal Resistance, Junction to Case θJC R Thermal Resistance, Junction to Ambient θJA * Device mounted on FR-4 PCB 1.6" × 1.6" × 0.06." © 2009 Fairchild Semiconductor Corporation 2N5551 / MMBT5551 Rev 10mA TO- 25°C unless otherwise noted A Parameter T =25°C unless otherwise noted ...

Page 2

... NPN (Is=2.511f Xti=3 Eg=1.11 Vaf=100 Bf=242.6 Ne=1.249 Ise=2.511f Ikf=.3458 Xtb=1.5 Br=3.197 Nc=2 Isc=0 Ikr=0 Rc=1 Cjc=4.883p Mjc=.3047 Vjc=.75 Fc=.5 Cje=18.79p Mje=.3416 Vje=.75 Tr=1.202n Tf=560p Itf=50m Vtf=5 Xtf=8 Rb=10) © 2009 Fairchild Semiconductor Corporation 2N5551 / MMBT5551 Rev 25°C unless otherwise noted ...

Page 3

... I - COLLECTOR CURRENT [mA] C Figure 3. Base-Emitter Saturation Voltage vs Collector Current 100V AMBIE NT TEMP ERATURE ( C) A Figure 5. Collector Cutoff Current vs Ambient Temperature © 2009 Fairchild Semiconductor Corporation 2N5551 / MMBT5551 Rev = 0.01 100 1000 Figure 2. Collector-Emitter Saturation Voltage 1.2 1.0 0.8 0.6 o 125 C o 100 C 0 ...

Page 4

... Resistance Between Emitter-Base 700 600 500 TO-92 SOT-23 400 300 200 100 TEMPERATURE ( C) Figure 7. Power Dissipation vs Ambient Temperature © 2009 Fairchild Semiconductor Corporation 2N5551 / MMBT5551 Rev 1.0 mA FREG = 20 MHz 100 1000 Ω Figure 8. Small Signal Current Gain 100 125 150 ...

Page 5

... TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended exhaustive list of all such trademarks. Auto-SPM F-PFS FRFET Build it Now CorePLUS Global Power Resource CorePOWER Green FPS CROSSVOLT Green FPS CTL™ ...

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