BSR17A Fairchild Semiconductor, BSR17A Datasheet - Page 2

• Manufacturer Part Number: BSR17A
• Description: IC AMP NPN 40V 200MA SOT-23
• Manufacturer: Fairchild Semiconductor

Specifications of BSR17A

• Transistor Type: NPN
• Current - Collector (ic) (max): 200mA
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 5mA, 50mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 10mA, 1V
• Power - Max: 350mW
• Frequency - Transition: 300MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 40 V
• Emitter- Base Voltage Vebo: 6 V
• Continuous Collector Current: 0.2 A
• Maximum Dc Collector Current: 0.2 A
• Power Dissipation: 350 mW
• Maximum Operating Frequency: 300 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 100
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 1
• Collector-emitter Voltage: 40V
• Collector-base Voltage: 60V
• Emitter-base Voltage: 6V
• Collector Current (dc) (max): 200mA
• Dc Current Gain (min): 100
• Frequency (max): 300MHz
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SOT-23
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: BSR17A; BSR17ATR

BSR17A Rev. A
Electrical Characteristics
Off Characteristics
On Characteristics
Small Signal Characteristics
Switching Characteristics
*
Spice Model
NPN (Is=6.734f Xti=3 Eg=1.11 Vaf=74.03 Bf=416.4 Ne=1.259 Ise=6.734 Ikf=66.78m Xtb=1.5 Br=.7371 Nc=2
Isc=0 Ikr=0 Rc=1 Cjc=3.638p Mjc=.3085 Vjc=.75 Fc=.5 Cje=4.493p Mje=.2593 Vje=.75 Tr=239.5n Tf=301.2p
Itf=.4 Vtf=4 Xtf=2 Rb=10)
V
V
V
I
I
I
h
V
V
f
C
C
h
h
h
td
t
t
t
Pulse Test: Pulse Width 300 s, Duty Cycle 2.0 %
CBO
CEX
BEX
T
r
s
f
FE
ie
fe
oe
(BR)CEO
(BR)CBO
(BR)EBO
CE(
BE(
Symbol
cb
eb
sat
sat
)
)
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Cutoff Current
Emitter-Cutoff Current
I
DC Current Gain
Collector-Emitter Saturation Voltage
Emitter-Base Breakdown Voltage
Transition Frequency
Collector-Base Capacitance
Emitter-Base Capacitance
Input Impedance
Small-Signal Current Gain
Output Admittance
Delay Time
Rise Time
Storage Time
Fall Time
BEX
Reverse Base Current
Parameter
*
T
a
= 25°C unless otherwise noted
*
*
I
I
I
V
V
V
I
I
I
I
I
I
I
I
I
I
V
V
V
V
V
I
I
C
C
C
C
C
C
C
C
C
C
C
C
C
C
C
CB
CE
CE
CB
EB
CE
CE
CE
= 1.0 mA, I
= 0.1 mA, V
= 1.0 mA, V
= 10 mA, V
= 50 mA, V
= 100 mA, V
= 10 mA, I
= 50 mA, I
= 10 mA, I
= 50 mA, I
= 20 mA, V
= 10 mA, I
= 10 µA, I
= 10 µA, I
= 10 mA, I
= 10 V,I
= 10 V,I
= 10 V,I
= 30 V, T
= 30 V, V
= 30 V, V
= 0.5 V, I
= 0.5 V, I
Test Condition
2
C
C
C
B
B
= 1.0 mA,f=1.0 kHz
= 1.0 mA,f=1.0 kHz
= 1.0 mA,f=1.0 kHz
B
B
B
B
B
B
E
C
A
B
EB
EB
CE
CE
CE
1 = 1.0 mA,V
on
= 0
= 0
= 1.0 mA
= 5.0 mA
= 1.0 mA
= 5.0 mA
CE
CE
= 0, f = 1.0 MHz
= 0, f = 1.0 MHz
= 150
= 0
CE
= 3.0 V
= 3.0 V
= 20 V, f = 100 MHz
= 1.0 V
= 1.0 V
= I
= 1.0 V
= 1.0 V
= 1.0 V
B
off
°
C
= 1.0 mA
EB
= 0.5 V
MIN
0.65
100
300
100
6.0
1.0
1.0
40
60
40
70
60
30
MAX
0.85
0.95
300
400
200
5.0
0.2
0.3
4.0
8.0
4.0
50
50
10
40
35
50
www.fairchildsemi.com
Units
MHz
µA
nA
nA
pF
pF
kΩ
µS
pF
ns
ns
ns
V
V
V
V
V
V
V