BSR17 Fairchild Semiconductor, BSR17 Datasheet

BSR17

Manufacturer Part Number

BSR17

Description

NPN General Purpose Amplifier

Manufacturer

Fairchild Semiconductor

Datasheet

1.BSR17.pdf (6 pages)

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1997 Fairchild Semiconductor Corporation

Symbol

CEO

CBO

EBO

, T

NPN General Purpose Amplifier

This device is designed as a general purpose amplifier and switch.

The useful dynamic range extends to 100 mA as a switch and to

100 MHz as an amplifier. Sourced from Process 23.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Absolute Maximum Ratings*

Thermal Characteristics

These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm.

stg

Total Device Dissipation

Thermal Resistance, Junction to Ambient

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current - Continuous

Operating and Storage Junction Temperature Range

Derate above 25 C

Mark: U92

SOT-23

BSR17A

Characteristic

Parameter

TA = 25°C unless otherwise noted

*BSR17A

Max

350

357

2.8

-55 to +150

Value

200

6.0

Units

mW/ C

C/W

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BSR17 Summary of contents

Page 1

... Derate above 25 C Thermal Resistance, Junction to Ambient Device mounted on FR-4 PCB 1.5 mm. 1997 Fairchild Semiconductor Corporation 25°C unless otherwise noted Parameter TA = 25°C unless otherwise noted Value Units 6.0 V 200 mA -55 to +150 C Max Units *BSR17A 350 mW 2.8 mW/ C 357 C/W 3 ...

Page 2

Electrical Characteristics Symbol Parameter OFF CHARACTERISTICS V Collector-Emitter Breakdown (BR)CEO Voltage V Collector-Base Breakdown Voltage (BR)CBO V Emitter-Base Breakdown Voltage (BR)EBO I Collector-Cutoff Current CBO I Collector-Cutoff Current CEX I Reverse Base Current BEX ON CHARACTERISTICS h DC Current Gain ...

Page 3

Typical Characteristics Typical Pulsed Current Gain vs Collector Current 500 400 125 °C 300 25 °C 200 - 40 °C 100 0 0 COLLECTOR CURRENT (mA) C Base-Emitter Saturation Voltage vs Collector Current ...

Page 4

Typical Characteristics Noise Figure vs Frequency 1 200 1 0 200 ...

Page 5

Typical Characteristics Storage Time vs Collector Current 500 T = 25°C J 100 T = 125° COLLECTOR CURRENT (mA) C Test Circuits 300 ns Duty Cycle 0.5 V 1.0 ns ...

Page 6

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FASTr™ Bottomless™ GlobalOptoisolator™ CoolFET™ GTO™ CROSSVOLT™ HiSeC™ DOME™ ...

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