MMBT3646 Fairchild Semiconductor, MMBT3646 Datasheet
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MMBT3646
Specifications of MMBT3646
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MMBT3646 Summary of contents
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... V Emitter-Base Breakdown Voltage (I (BR)EBO I Collector Cut-off Current (V CES On Characteristics ( Current Gain ( Collector-Emitter Saturation Voltage (I CE(sat) V Base-Emitter Saturation Voltage (I BE(sat) ©2002 Fairchild Semiconductor Corporation MMBT3646 T =25 C unless otherwise noted C Parameter - Continuous @ T = =25 C unless otherwise noted C Parameter = 100 Adc 10mAdc 100 Adc, I ...
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... Rise Time r t Turn-Off Time off t Fall Time f t Storge Time s Thermal Characteristics Symbol R Thermal Resistance, Junction to Ambient JA R Thermal Resistance, Junction to Case JC ©2002 Fairchild Semiconductor Corporation T =25 C unless otherwise noted) (Continued) C Parameter = 1MHz 1MHz 10Vdc 300mAdc 30mAdc CE(off 10Vdc 300mAdc, ...
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... Package Dimensions 0.40 0.03 2.90 0.95 0.03 1.90 ©2002 Fairchild Semiconductor Corporation SOT-23 0.40 0.03 0.96~1.14 0.10 0.95 0.03 0.508REF 0.03 0.03~0.10 0.38 REF +0.05 0.12 –0.023 Dimensions in Millimeters Rev. A1, November 2002 ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ ® Bottomless™ FAST CoolFET™ FASTr™ CROSSVOLT™ ...