MMBT3646 Fairchild Semiconductor, MMBT3646 Datasheet
MMBT3646
Manufacturer Part Number
MMBT3646
Description
TRANSISTOR SWITCHING NPN SOT-23
Manufacturer
Fairchild Semiconductor
Datasheet
1.MMBT3646.pdf
(4 pages)
Specifications of MMBT3646
Transistor Type
NPN
Current - Collector (ic) (max)
300mA
Voltage - Collector Emitter Breakdown (max)
15V
Vce Saturation (max) @ Ib, Ic
500mV @ 30mA, 300mA
Current - Collector Cutoff (max)
500nA
Dc Current Gain (hfe) (min) @ Ic, Vce
30 @ 30mA, 400mV
Power - Max
625mW
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Configuration
Single
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
15 V
Emitter- Base Voltage Vebo
5 V
Continuous Collector Current
0.3 A
Maximum Dc Collector Current
0.3 A
Power Dissipation
625 mW
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
30
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Frequency - Transition
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MMBT3646
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
©2002 Fairchild Semiconductor Corporation
Switching Transistor
Absolute Maximum Ratings
Electrical Characteristics
V
V
V
V
I
P
T
Off Characteristics
V
V
V
V
I
On Characteristics (1)
h
V
V
C
CES
FE
J
CEO
CES
CBO
EBO
D
(BR)CES
CEO(
(BR)CBO
(BR)EBO
CE(sat)
BE(sat)
, T
Symbol
Symbol
STG
SUS
)
Collector-Emitter Breakdown Voltage (I
Collector-Emitter Sustaining Voltage (1) (I
Collector-Base Breakdown Voltage (I
Emitter-Base Breakdown Voltage (I
Collector Cut-off Current (V
DC Current Gain (I
Collector-Emitter Saturation Voltage (I
Base-Emitter Saturation Voltage (I
Collector-Emitter Voltage
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current (DC)
Total Device Dissipation
Operating and Storage Junction Temperature Range
- Derate above 25 C
(I
(I
C
C
C
= 100mAdc, V
= 300mAdc, V
= 30mAdc, V
T
(V
C
=25 C unless otherwise noted
CE
CE
T
Parameter
C
= 20Vdc, V
= 20Vdc, V
=25 C unless otherwise noted
Parameter
MMBT3646
(I
(I
CE
C
C
C
CE
CE
E
= 100mAdc, I
= 300mAdc, I
- Continuous
@ T
= 30mAdc, I
(I
(I
(I
C
= 100 Adc, I
= 0.4Vdc)
C
C
C
= 0.5Vdc)
= 1Vdc)
C
C
= 100 Adc, I
= 100mAdc, I
= 300mAdc, I
= 30mA, I
= 30mAdc, I
A
= 100 Adc, V
=25 C
C
BE
BE
= 10mAdc, I
= 0)
= 0, T
B
B
B
B
C
= 3mAdc)
A
= 3mA, T
= 10mAdc)
= 30mAdc)
E
= 0)
B
= 65 C)
B
B
= 0)
= 3mAdc)
BE
= 10mAdc)
= 30mAdc)
B
= 0)
= 0)
A
=65 C)
1. Base 2. Emitter 3. Collector
3
0.73
Min.
Value
40
15
40
30
25
15
5
300
625
150
15
40
40
5
5
Typ.
1
SOT-23
Max.
0.28
0.95
Rev. A1, November 2002
120
0.5
0.2
0.5
0.3
1.2
1.7
2
3
mW/ C
Units
mW
mA
V
V
V
C
Units
V
V
V
V
V
V
A
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MMBT3646 Summary of contents
Page 1
... V Emitter-Base Breakdown Voltage (I (BR)EBO I Collector Cut-off Current (V CES On Characteristics ( Current Gain ( Collector-Emitter Saturation Voltage (I CE(sat) V Base-Emitter Saturation Voltage (I BE(sat) ©2002 Fairchild Semiconductor Corporation MMBT3646 T =25 C unless otherwise noted C Parameter - Continuous @ T = =25 C unless otherwise noted C Parameter = 100 Adc 10mAdc 100 Adc, I ...
Page 2
... Rise Time r t Turn-Off Time off t Fall Time f t Storge Time s Thermal Characteristics Symbol R Thermal Resistance, Junction to Ambient JA R Thermal Resistance, Junction to Case JC ©2002 Fairchild Semiconductor Corporation T =25 C unless otherwise noted) (Continued) C Parameter = 1MHz 1MHz 10Vdc 300mAdc 30mAdc CE(off 10Vdc 300mAdc, ...
Page 3
... Package Dimensions 0.40 0.03 2.90 0.95 0.03 1.90 ©2002 Fairchild Semiconductor Corporation SOT-23 0.40 0.03 0.96~1.14 0.10 0.95 0.03 0.508REF 0.03 0.03~0.10 0.38 REF +0.05 0.12 –0.023 Dimensions in Millimeters Rev. A1, November 2002 ...
Page 4
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ ® Bottomless™ FAST CoolFET™ FASTr™ CROSSVOLT™ ...