MPS6521 Fairchild Semiconductor, MPS6521 Datasheet
MPS6521
Manufacturer Part Number
MPS6521
Description
TRANSISTOR NPN GEN PURP TO-92
Manufacturer
Fairchild Semiconductor
Datasheet
1.MPS6521.pdf
(3 pages)
Specifications of MPS6521
Transistor Type
NPN
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
25V
Vce Saturation (max) @ Ib, Ic
500mV @ 5mA, 50mA
Dc Current Gain (hfe) (min) @ Ic, Vce
300 @ 2mA, 10V
Power - Max
625mW
Mounting Type
Through Hole
Package / Case
TO-92-3 (Standard Body), TO-226
Transistor Polarity
NPN
Number Of Elements
1
Collector-emitter Voltage
25V
Collector-base Voltage(max)
40V
Emitter-base Voltage (max)
4V
Collector Current (dc) (max)
100mA
Dc Current Gain (min)
150
Power Dissipation
625mW
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3
Package Type
TO-92
Configuration
Single
Mounting Style
Through Hole
Collector- Emitter Voltage Vceo Max
25 V
Emitter- Base Voltage Vebo
4 V
Continuous Collector Current
0.1 A
Maximum Dc Collector Current
0.1 A
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
300
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Frequency - Transition
-
Lead Free Status / Rohs Status
Compliant
Other names
MPS6521FS
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MPS6521
Manufacturer:
FSC
Quantity:
3 920
Company:
Part Number:
MPS6521
Manufacturer:
FAIRCHILD
Quantity:
68 000
Part Number:
MPS6521
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
©2003 Fairchild Semiconductor Corporation
NPN General Purpose Amplifier
• This device is deisgned for general purpose amplifier applications at
• Sourced from process 10.
Absolute Maximum Ratings
Electrical Characteristics
* Pulse Test: Pulse Width
Thermal Characteristics
V
V
V
I
T
Off Characteristics
V
V
I
On Characteristics
h
V
P
R
R
C
CBO
collector to 300mA.
FE
J
CEO
CBO
EBO
(BR)CEO
(BR)EBO
CE
D
Symbol
, T
Symbol
JC
JA
Symbol
(sat)
STG
Total Device Dissipation
Derate above 25 C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Collector-Emitter Sustaining Voltage *
Emitter-Base Breakdown Voltage
Emitter Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Operating and Storage Junction Temperature Range
300 s, Duty Cycle
Parameter
2.0%
Parameter
T
a
T
=25 C unless otherwise noted
a
=25 C unless otherwise noted
T
Parameter
a
=25 C unless otherwise noted
- Continuous
MPS6521
I
I
V
V
V
I
C
E
C
CB
CE
CE
= 500 A, I
= 10 A, I
= 50mA, I
= 30V, I
= 10V, I
= 10V, I
Test Condition
C
B
E
C
C
B
= 0
= 5.0mA
= 0
= 100 A
= 2.0mA
= 0
Max.
83.3
625
200
5
1. Emitter 2. Base 3. Collector
1
- 55 ~ 150
Value
100
4.0
25
40
Min.
150
300
25
4
TO-92
Max.
600
0.5
50
mW/ C
Units
mW
C/W
C/W
Rev. A, November 2003
Units
mA
Units
V
V
V
C
nA
V
V
V
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MPS6521 Summary of contents
Page 1
... Pulse Test: Pulse Width 300 s, Duty Cycle Thermal Characteristics Symbol P Total Device Dissipation D Derate above Thermal Resistance, Junction to Case JC R Thermal Resistance, Junction to Ambient JA ©2003 Fairchild Semiconductor Corporation MPS6521 T =25 C unless otherwise noted a Parameter - Continuous T =25 C unless otherwise noted a Test Condition I = 500 ...
Page 2
... Package Dimensions 0.46 0.10 1.27TYP [1.27 ] 0.20 ©2003 Fairchild Semiconductor Corporation TO-92 +0.25 4.58 –0.15 1.27TYP [1.27 ] 0.20 3.60 0.20 (R2.29) +0.10 0.38 –0.05 Dimensions in Millimeters Rev. A, November 2003 ...
Page 3
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT Quiet Series™ ® ActiveArray™ FAST Bottomless™ FASTr™ CoolFET™ FRFET™ CROSSVOLT™ ...