PN100A Fairchild Semiconductor, PN100A Datasheet - Page 2

• Manufacturer Part Number: PN100A
• Description: TRANSISTOR GP NPN 45V TO-92
• Manufacturer: Fairchild Semiconductor

Specifications of PN100A

• Transistor Type: NPN
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 45V
• Vce Saturation (max) @ Ib, Ic: 400mV @ 20mA, 200mA
• Current - Collector Cutoff (max): 50nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 300 @ 10mA, 1V
• Power - Max: 625mW
• Frequency - Transition: 250MHz
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: Through Hole
• Collector- Emitter Voltage Vceo Max: 45 V
• Emitter- Base Voltage Vebo: 6 V
• Continuous Collector Current: 0.5 A
• Maximum Dc Collector Current: 0.5 A
• Power Dissipation: 625 mW
• Maximum Operating Frequency: 250 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 300
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 1
• Collector-emitter Voltage: 45V
• Collector-base Voltage: 75V
• Emitter-base Voltage: 6V
• Collector Current (dc) (max): 500mA
• Dc Current Gain (min): 240
• Frequency (max): 250MHz
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3
• Package Type: TO-92
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

PN100/PN100A/MMBT100/MMBT100A Rev. C1
© 2008 Fairchild Semiconductor Corporation
Electrical Characteristics
* Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2.0%
Off Characteristics
BV
BV
BV
I
I
I
On Characteristics
h
V
V
Small Signal Characteristics
f
C
NF
CBO
CES
EBO
T
FE
CE(sat)
BE(sat)
Symbol
obo
CBO
CEO
EBO
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage *
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Collector-Emiitter Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
Noise Figure
Parameter
T
C
=25°C unless otherwise noted
I
I
I
V
V
V
I
I
I
I
I
I
I
I
V
V
I
R
C
C
E
C
C
C
C
C
C
C
C
C
2
CB
CE
EB
CE
CB
G
= 10μA, I
= 1mA, I
= 10μA, I
= 100μA, V
= 10mA, V
= 100mA, V
= 150mA, V
= 10mA, I
= 200mA, I
= 10mA, I
= 200mA, I
= 100μA, V
= 2.0kΩ, f = 1.0KHz
= 60V
= 40V
= 4V
= 20V, I
= 5.0V, f = 1.0MHz
B
C
E
Test Condition
B
B
C
= 0
CE
= 0
= 0
B
B
CE
CE
= 1.0mA
= 1.0mA
= 20mA
CE
CE
= 20mA
= 20mA
= 1.0V
= 1.0V
= 5.0V
= 1.0V*
= 5.0V *
100
100A
100
100A
100
100A
100
100A
Min.
240
100
300
100
100
100
250
6.0
75
45
80
Max.
0.85
450
600
350
0.2
0.4
1.0
4.5
5.0
4.0
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50
50
50
Units
MHz
nA
nA
nA
pF
dB
dB
V
V
V
V
V
V
V