PN100A Fairchild Semiconductor, PN100A Datasheet - Page 4

• Manufacturer Part Number: PN100A
• Description: TRANSISTOR GP NPN 45V TO-92
• Manufacturer: Fairchild Semiconductor

Specifications of PN100A

• Transistor Type: NPN
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 45V
• Vce Saturation (max) @ Ib, Ic: 400mV @ 20mA, 200mA
• Current - Collector Cutoff (max): 50nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 300 @ 10mA, 1V
• Power - Max: 625mW
• Frequency - Transition: 250MHz
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: Through Hole
• Collector- Emitter Voltage Vceo Max: 45 V
• Emitter- Base Voltage Vebo: 6 V
• Continuous Collector Current: 0.5 A
• Maximum Dc Collector Current: 0.5 A
• Power Dissipation: 625 mW
• Maximum Operating Frequency: 250 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 300
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 1
• Collector-emitter Voltage: 45V
• Collector-base Voltage: 75V
• Emitter-base Voltage: 6V
• Collector Current (dc) (max): 500mA
• Dc Current Gain (min): 240
• Frequency (max): 250MHz
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3
• Package Type: TO-92
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

PN100/PN100A/MMBT100/MMBT100A Rev. C1
© 2008 Fairchild Semiconductor Corporation
Typical Characteristics
300
270
240
210
180
150
120
90
60
30
0
10
t d
Figure 7. Switching Times vs
I - COLLECTOR CURRENT (mA)
20
C
IB1 = IB2 = Ic / 10
Collector Current
V
cc
30
= 10 V
t f
50
t r
100
(Continued)
t s
200
300
4
700
600
500
400
300
200
100
0
0
SOT-23
Figure 8. Power Dissipation vs
25
Ambient Temperature
TEMPERATURE ( C)
50
TO-92
75
100
o
125
www.fairchildsemi.com
150