BC635 Fairchild Semiconductor, BC635 Datasheet - Page 2

• Manufacturer Part Number: BC635
• Description: TRANSISTOR NPN 45V 1A TO-92
• Manufacturer: Fairchild Semiconductor

Specifications of BC635

• Transistor Type: NPN
• Current - Collector (ic) (max): 1A
• Voltage - Collector Emitter Breakdown (max): 45V
• Vce Saturation (max) @ Ib, Ic: 500mV @ 50mA, 500mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 40 @ 150mA, 2V
• Power - Max: 1W
• Frequency - Transition: 100MHz
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: Through Hole
• Collector- Emitter Voltage Vceo Max: 45 V
• Emitter- Base Voltage Vebo: 5 V
• Continuous Collector Current: 1 A
• Maximum Dc Collector Current: 1 A
• Power Dissipation: 1 W
• Maximum Operating Frequency: 100 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 40
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

©2002 Fairchild Semiconductor Corporation
Typical Characteristics
Figure 3. Base-Emitter Saturation Voltage
0.01
100
200
160
120
Figure 5. Collector Output Capacitance
0.1
10
10
80
40
1
1
0
Collector-Emitter Saturation Voltage
1
1
0
Figure 1. Static Characteristic
V
V
CB
CE
10
I
[V], COLLECTOR-BASE VOLTAGE
C
[V], COLLECTOR-EMITTER VOLTAGE
V
[mA], COLLECTOR CURRENT
CE
V
(sat)
BE
(sat)
10
20
10
I
B
= 1.8 mA
30
I
100
B
= 1.6 mA
I
B
I
I
B
I
I
I
B
I
B
B
= 1.4 mA
B
B
= 1.2 mA
= 1.0 mA
= 0.8 mA
= 0.6 mA
= 0.4 mA
f=1MHz
= 0.2 mA
40
I
C
= 10 I
B
1000
100
50
1000
100
10
1000
100
10
1
1
0.0
Figure 4. Base-Emitter On Voltage
Figure 2. DC current Gain
0.2
I
C
[mA], COLLECTOR CURRENT
V
BE
[V], BASE-EMITTER VOLTAGE
10
0.4
0.6
100
0.8
V
CE
= 2V
V
1.0
CE
Rev. B2, December 2002
= 2V
1000
1.2