PZT3906 Fairchild Semiconductor, PZT3906 Datasheet - Page 2

• Manufacturer Part Number: PZT3906
• Description: TRANSISTOR GP PNP 40V SOT-223
• Manufacturer: Fairchild Semiconductor

Specifications of PZT3906

• Transistor Type: PNP
• Current - Collector (ic) (max): 200mA
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 400mV @ 5mA, 50mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 10mA, 1V
• Power - Max: 1W
• Frequency - Transition: 250MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Transistor Polarity: PNP
• Number Of Elements: 1
• Collector-emitter Voltage: 40V
• Collector-base Voltage(max): 40V
• Emitter-base Voltage (max): 5V
• Collector Current (dc) (max): 200mA
• Dc Current Gain (min): 100
• Power Dissipation: 1W
• Frequency (max): 250MHz
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3 +Tab
• Package Type: SOT-223
• Configuration: Single Dual Collector
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 40 V
• Emitter- Base Voltage Vebo: - 5 V
• Continuous Collector Current: 0.2 A
• Maximum Dc Collector Current: 0.2 A
• Maximum Operating Frequency: 250 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 100
• Minimum Operating Temperature: - 65 C
• Collector Emitter Voltage V(br)ceo: 40V
• Power Dissipation Pd: 1W
• Dc Collector Current: 200mA
• Dc Current Gain Hfe: 300
• Operating Temperature Range: -55°C To +150°C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Compliant

OFF CHARACTERISTICS
ON CHARACTERISTICS
SMALL SIGNAL CHARACTERISTICS
SWITCHING CHARACTERISTICS
t
t
t
t
f
C
C
NF
V
V
V
I
I
h
V
V
d
r
s
f
Symbol
T
BL
CEX
*
FE
(BR)CEO
(BR)CBO
(BR)EBO
CE(sat)
BE(sat)
obo
ibo
Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%
Electrical Characteristics
Spice Model
PNP (Is=1.41f Xti=3 Eg=1.11 Vaf=18.7 Bf=180.7 Ne=1.5 Ise=0 Ikf=80m Xtb=1.5 Br=4.977 Nc=2 Isc=0 Ikr=0
Rc=2.5 Cjc=9.728p Mjc=.5776 Vjc=.75 Fc=.5 Cje=8.063p Mje=.3677 Vje=.75 Tr=33.42n Tf=179.3p Itf=.4 Vtf=4
Xtf=6 Rb=10)
Delay Time
Rise Time
Storage Time
Fall Time
Current Gain - Bandwidth Product
Output Capacitance
Input Capacitance
Noise Figure
Collector-Emitter Breakdown Voltage*
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Base Cutoff Current
Collector Cutoff Current
DC Current Gain *
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Parameter
T
A
= 25°C unless otherwise noted
I
f = 100 MHz
V
f = 100 kHz
V
f = 100 kHz
I
R
V
I
V
I
I
I
I
V
V
I
I
I
I
I
I
I
I
I
C
C
C
B1
C
C
E
C
C
C
C
C
C
C
C
C
CB
EB
CC
CC
S
CE
CE
= -10 mA, I
= -10 mA, V
= -100 A, V
= -1.0 mA, I
= -10 A, I
= -10 A, I
= -0.1 mA, V
= -1.0 mA, V
= -10 mA, V
= -50 mA, V
= -100 mA, V
= -10 mA, I
= -50 mA, I
= -10 mA, I
= -50 mA, I
= I
=1.0 k , f=10 Hz to 15.7 kHz
= -3.0 V, V
= -3.0 V, I
= -5.0 V, I
= -0.5 V, I
= -30 V, V
= -30 V, V
Test Conditions
B2
= -1.0 mA
C
E
B1
B
B
B
B
C
CE
CE
B
= 0
CE
E
C
= 0
BE
BE
BE
CE
CE
CE
= -1.0 mA
= -5.0 mA
= -1.0 mA
= -5.0 mA
= -1.0 mA
CE
= -10 mA
= 0
= 0,
= 0,
= -3.0 V
= -1.0 V
= -1.0 V
= -3.0 V
= -0.5 V,
PNP General Purpose Amplifier
= -1.0 V
= -1.0 V
= -20 V,
= -1.0 V
= -5.0 V,
-0.65
Min
250
100
-5.0
-40
-40
60
80
60
30
10.0
Max
-0.95
-0.25
-0.85
4.5
4.0
225
-50
300
-50
-0.4
35
75
35
(continued)
Units
MHz
dB
pF
pF
ns
ns
ns
ns
nA
nA
V
V
V
V
V
V
V