BCP52 Fairchild Semiconductor, BCP52 Datasheet - Page 3

• Manufacturer Part Number: BCP52
• Description: TRANSISTOR PNP 60V 1.2A SOT-223
• Manufacturer: Fairchild Semiconductor

Specifications of BCP52

• Transistor Type: PNP
• Current - Collector (ic) (max): 1.2A
• Voltage - Collector Emitter Breakdown (max): 60V
• Vce Saturation (max) @ Ib, Ic: 500mV @ 50mA, 500mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 40 @ 150mA, 2V
• Power - Max: 1.5W
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Configuration: Single Dual Collector
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 60 V
• Emitter- Base Voltage Vebo: - 5 V
• Continuous Collector Current: 1.2 A
• Maximum Dc Collector Current: 1.2 A
• Power Dissipation: 1.5 W
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 40
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Frequency - Transition: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Typical Characteristics
250
200
150
100
100
0.8
0.6
0.4
0.1
50
10
0
1
1
25
1
1
Voltage vs Collector Current
V
CE
V
Base-Emitter Saturation
CB
Gain Bandwidth Product
vs Ambient Temperature
Collector-Cutoff Current
= 10
= 10V
I
- 40 °C
C
= 40V
T - AM BIENT TE MPERATURE ( C)
vs Collector Current
I - COLLECTOR CURRENT (mA)
50
- COLLECTOR CURRENT ( mA)
C
A
10
10
75
125 °C
25 °C
100
100
100
(continued)
125
°
1000
1000
150
0.8
0.6
0.4
0.2
40
30
20
10
0
1
1.25
0.75
0.25
0
1.5
0.5
1
1
0
PNP General Purpose Amplifier
0
Collector-Base Capacitance
Base-Emitter ON Voltage vs
vs Collector-Base Voltage
V
4
CB
- 40 °C
I
- COLLECTOR-BASE VOLTAGE (V)
C
25
Ambient Temperature
Collector Current
Power Dissipation vs
- COLLECTOR CURRENT (mA)
8
10
TEMPERATURE ( C)
50
12
25 °C
SOT-223
16
125 °C
75
20
100
f = 1.0 MHz
o
100
V
24
CE
= 5V
125
(continued)
28
1000
150
3