BCP51 Fairchild Semiconductor, BCP51 Datasheet
BCP51
Manufacturer Part Number
BCP51
Description
TRANSISTOR PNP 45V 1.5A SOT-223
Manufacturer
Fairchild Semiconductor
Datasheet
1.BCP51.pdf
(3 pages)
Specifications of BCP51
Transistor Type
PNP
Current - Collector (ic) (max)
1.5A
Voltage - Collector Emitter Breakdown (max)
45V
Vce Saturation (max) @ Ib, Ic
500mV @ 50mA, 500mA
Dc Current Gain (hfe) (min) @ Ic, Vce
40 @ 150mA, 2V
Power - Max
1W
Mounting Type
Surface Mount
Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Configuration
Single
Transistor Polarity
PNP
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
45 V
Emitter- Base Voltage Vebo
- 5 V
Continuous Collector Current
- 1.5 A
Maximum Dc Collector Current
1.5 A
Power Dissipation
1 W
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
40
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Frequency - Transition
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
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©2004 Fairchild Semiconductor Corporation
PNP General Purpose Amplifier
• This device is designed for general purpose medium power amplifiers
• Sourced from process 77.
Absolute Maximum Ratings*
* These ratings are limiting values above whitch the serviceability of any semiconductor device may be impaird.
NOTES:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics
Thermal Characteristics
* Device mounted on FR-4PCB 36mm × 18mm × 1.5mm; mounting pad for the collector lead min. 6cm
V
V
V
I
T
Off Characteristics
V
V
V
I
I
On Characteristics
h
V
V
P
R
C
CBO
EBO
and switches requiring collecor currents to 1.0A.
FE
J
CEO
CBO
EBO
(BR)CEO
(BR)CBO
(BR)EBO
CE
BE
D
Symbol
, T
Symbol
JA
Symbol
(sat)
(on)
STG
Total Device Dissipation
Derate above 25 C
Thermal Resistance, Junction to Ambient
Collector-Emitter Sustaining Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Operating and Storage Junction Temperature Range
Parameter
Parameter
T
a
T
=25 C unless otherwise noted
a
=25 C unless otherwise noted
Parameter
T
a
=25 C unless otherwise noted
- Continuous
BCP51
I
I
I
V
V
V
I
I
I
I
I
C
C
E
C
C
C
C
C
CB
CB
EB
= -10mA, I
= -100 A, I
= -10 A, I
= -5.0mA, V
= -150mA, V
= -500mA, V
= -500mA, I
= -500mA, V
= -5.0V, I
= -30V, I
= -30V, I
Test Condition
C
B
E
E
C
E
= 0
B
CE
= 0
= 0
= 0, T
CE
CE
CE
= 0
= 0
= -50mA
2
= -2.0V
= -2.0
= -2.0V
= -2.0V
.
a
= 125 C
Max.
125
1.0
8.0
1. Base 2. Collector 3. Emitter
- 55 ~ 150
4
Value
-5.0
-1.5
-45
-45
Min.
-5.0
-45
-45
25
40
25
1
SOT-223
Max.
-100
-0.5
-1.0
250
mW/ C
-10
-10
2
Units
C/W
W
Rev. A, August 2004
3
Units
V
V
A
V
Units
C
nA
V
V
V
V
V
A
A
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BCP51 Summary of contents
Page 1
... P Total Device Dissipation D Derate above Thermal Resistance, Junction to Ambient JA * Device mounted on FR-4PCB 36mm × 18mm × 1.5mm; mounting pad for the collector lead min. 6cm ©2004 Fairchild Semiconductor Corporation BCP51 T =25 C unless otherwise noted a Parameter - Continuous T =25 C unless otherwise noted a Test Condition ...
Page 2
... Package Dimensions (0.95) ©2004 Fairchild Semiconductor Corporation SOT-223 3.00 0.10 MAX1.80 2.30 TYP 0.70 0.10 (0.95) 4.60 0.25 0.25 6.50 0.20 +0.04 0.06 –0.02 +0.10 –0.05 Dimensions in Millimeters Rev. A, August 2004 ...
Page 3
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ® A FAST CEx™ FASTr™ ActiveArray™ FPS™ Bottomless™ FRFET™ CoolFET™ CROSSVOLT™ GlobalOptoisolator™ ...