BCP69 Fairchild Semiconductor, BCP69 Datasheet
BCP69
Manufacturer Part Number
BCP69
Description
TRANSISTOR PNP 20V 1.5A SOT-223
Manufacturer
Fairchild Semiconductor
Datasheet
1.BCP69.pdf
(5 pages)
Specifications of BCP69
Transistor Type
PNP
Current - Collector (ic) (max)
1.5A
Voltage - Collector Emitter Breakdown (max)
20V
Vce Saturation (max) @ Ib, Ic
500mV @ 100mA, 1A
Dc Current Gain (hfe) (min) @ Ic, Vce
85 @ 500mA, 1V
Power - Max
1W
Mounting Type
Surface Mount
Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Configuration
Single
Transistor Polarity
PNP
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
20 V
Emitter- Base Voltage Vebo
- 5 V
Continuous Collector Current
1 A
Maximum Dc Collector Current
1.5 A
Power Dissipation
1 W
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
85
Minimum Operating Temperature
- 55 C
Collector Emitter Voltage V(br)ceo
-20V
Power Dissipation Pd
1W
Dc Collector Current
-1.5A
Dc Current Gain Hfe
85
No. Of Pins
4
Current Rating
1A
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Frequency - Transition
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
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©2007 Fairchild Semiconductor Corporation
BCP69 Rev. B
BCP69
PNP General Purpose Amplifier
• This device is designed for general purpose medium power amplifiers
• Sourced from Process 77.
Absolute Maximum Ratings*
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150°C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics*
* Device mounted on FR-4 PCB 36mm × 18mm × 1.5mm; mounting pad for the collector lead min. 6cm
Electrical Characteristics*
* Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%
V
V
V
I
T
T
P
R
BV
BV
BV
I
I
h
V
V
C
h
Symbol
C
CBO
EBO
J
STG
FE
fe
CEO
CBO
EBO
D
CE(sat)
BE(on)
and switches requiring collector currents to 1.0A.
θJA
cb
CEO
CBO
EBO
Symbol
Symbol
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Collector-Base Capacitance
Small-Signal Current Gain
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Junction Temperature
Storage Temperature Range
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Ambient
Parameter
Parameter
Parameter
T
a
=25°C unless otherwise noted
T
a
= 25°C unless otherwise noted
T
- Continuous
a
=25°C unless otherwise noted
I
I
I
V
V
V
I
I
I
I
I
V
I
C
C
E
C
C
C
C
C
C
CB
CB
EB
CB
= -100µA, I
= -10mA, I
= -1.0mA, I
= -5mA, V
= -500mA, V
= -1.0A, V
= -1.0A, I
= -1.0A, V
= -50mA, V
= -25V, I
= -25V, I
= -5.0V, I
= -10V, I
Test Conditions
1
B
CE
CE
CE
B
E
E
E
C
E
C
= -100mA
CE
= 0
= 0
= 0, T
= 0, f = 1.0MHz
CE
= 0
= 0
= 0
= -1.0V
= -1.0V
= -1.0V
= -10V, f = 20MHz
= -1.0V
j
= 150
2
o
C
- 55 ~ +150
Value
Value
Min.
-5.0
-1.5
150
-20
-30
125
1.0
8.0
-5.0
-20
-30
2.5
50
85
60
1. Base 2. Collector 3. Emitter
4
Typ.
Max.
January 2007
-100
-100
-0.5
-1.0
1
375
-10
30
www.fairchildsemi.com
SOT-223
2
Units
mW/°C
Units
°C/W
°C
°C
W
V
V
V
A
Units
3
nA
uA
nA
pF
V
V
V
V
V
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BCP69 Summary of contents
Page 1
... CE(sat) V Base-Emitter On Voltage BE(on) C Collector-Base Capacitance cb h Small-Signal Current Gain fe * Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0% ©2007 Fairchild Semiconductor Corporation BCP69 Rev =25°C unless otherwise noted a Parameter - Continuous T =25°C unless otherwise noted a Parameter 25°C unless otherwise noted ...
Page 2
... Base-Emitter Saturation Voltage vs Collector Current β 0 °C 25 °C 0.6 0 COLLECTOR CURRENT ( mA) C Collector-Cutoff Current vs Ambient Temperature 100 0 BIENT TE MPE RATURE ( C) A BCP69 Rev 0.8 125 °C 0.6 0.4 0 0.8 0.6 0.4 125 °C 0.2 1 100 1000 100 125 150 0 ° ...
Page 3
... Typical Performance Characteristics Gain Bandwidth Product vs Collector Current 250 V = 10V CE 200 150 100 COLLECTOR CURRENT (mA) C BCP69 Rev. B Power Dissipation vs Power Dissipation vs Ambient Temperature Ambient Temperature 700 1 .5 600 500 1 .0 400 300 0 .5 200 100 100 1000 TO- 100 125 150 ...
Page 4
... Mechanical Dimensions (0.95) BCP69 Rev. B SOT-223 ±0.10 3.00 MAX1.80 2.30 TYP ±0.10 0.70 (0.95) ±0.25 4.60 0.25 6.50 ±0.20 4 +0.04 0.06 –0.02 +0.10 –0.05 Dimensions in Millimeters www.fairchildsemi.com ...
Page 5
... PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Preliminary No Identification Needed Obsolete BCP69 Rev. B OCX™ SILENT SWITCHER OCXPro™ SMART START™ ® OPTOLOGIC SPM™ OPTOPLANAR™ ...