TN2907A Fairchild Semiconductor, TN2907A Datasheet

TN2907A

Manufacturer Part Number

TN2907A

Description

TRANS GP PNP 60V 800MA TO-226

Manufacturer

Fairchild Semiconductor

Datasheet

1.TN2907A_D26Z.pdf (3 pages)

Specifications of TN2907A

Transistor Type

PNP

Current - Collector (ic) (max)

800mA

Voltage - Collector Emitter Breakdown (max)

60V

Vce Saturation (max) @ Ib, Ic

1.6V @ 50mA, 500mA

Dc Current Gain (hfe) (min) @ Ic, Vce

100 @ 150mA, 10V

Power - Max

625mW

Mounting Type

Through Hole

Package / Case

TO-92-3 (Long Body), TO-226

Configuration

Single

Transistor Polarity

PNP

Mounting Style

Through Hole

Collector- Emitter Voltage Vceo Max

60 V

Emitter- Base Voltage Vebo

- 5 V

Continuous Collector Current

0.8 A

Maximum Dc Collector Current

0.8 A

Power Dissipation

625 mW

Maximum Operating Temperature

+ 150 C

Dc Collector/base Gain Hfe Min

100

Minimum Operating Temperature

- 55 C

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Current - Collector Cutoff (max)

Frequency - Transition

Lead Free Status / Rohs Status

Lead free / RoHS Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

TN2907A

Manufacturer:

FSC

Quantity:

24 049

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

TN2907A-ROHS

Manufacturer:

FSC

Quantity:

3 600

Current page: 1 of 3
Download datasheet (93Kb)

TN2907A Rev. 1.0.0

TN2907A

PNP General Purpose Amplifier

• This device is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA.

• Sourced from process 63.

Absolute Maximum Ratings*

* This ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These rating are based on a maximum junction temperature of 150 degrees C.

2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

3) All voltages (V) and currents (A) are negative polarity for PNP transistors.

Thermal Characteristics

CBO

CEO

EBO

θJC

θJA

Symbol

, T

Symbol

STG

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current - Continuous

Operating and Storage Junction Temperature Range

Total Device Dissipation

Derate above 25°C

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

=25°C unless otherwise noted

Parameter

=25°C unless otherwise noted

1. Collector 2. Base 3. Emitter

TO-226

-55 ~ 150

Value

Max.

83.3

800

625

200

5.0

September 2007

www.fairchildsemi.com

Units

mW/°C

°C/W

°C

Related parts for TN2907A

TN2907A Summary of contents

Page 1

... Symbol P Total Device Dissipation D Derate above 25°C R Thermal Resistance, Junction to Case θJC R Thermal Resistance, Junction to Ambient θJA © 2007 Fairchild Semiconductor Corporation TN2907A Rev. 1.0.0 1 TO-226 1. Collector 2. Base 3. Emitter T =25°C unless otherwise noted a Parameter T =25°C unless otherwise noted a Parameter ...

Page 2

... Output Capacitance obo C Input Capacitance ibo * Pulse Test: Pulse Width £ 300ms, Duty Cycle = 2% NOTES: 1) All voltages (V) and currents (A) are negative polarity for PNP transistors. © 2007 Fairchild Semiconductor Corporation TN2907A Rev. 1.0.0 T =25×C unless otherwise noted a Test Condition I = 10μ ...

Page 3

... Advance Information Formative or In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production © 2007 Fairchild Semiconductor Corporation TN2907A Rev. 1.0.0 ® Green FPS™ Power247 Green FPS™ e-Series™ POWEREDGE GTO™ Power-SPM™ i-Lo™ PowerTrench IntelliMAX™ ...

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