FMBA06 Fairchild Semiconductor, FMBA06 Datasheet

FMBA06

Manufacturer Part Number

FMBA06

Description

TRANSISTOR NPN 80V 500MA SSOT-6

Manufacturer

Fairchild Semiconductor

Datasheet

1.FMBA06.pdf (5 pages)

Specifications of FMBA06

Transistor Type

NPN

Current - Collector (ic) (max)

500mA

Voltage - Collector Emitter Breakdown (max)

80V

Vce Saturation (max) @ Ib, Ic

250mV @ 10mA, 100mA

Current - Collector Cutoff (max)

100nA

Dc Current Gain (hfe) (min) @ Ic, Vce

100 @ 100mA, 1V

Power - Max

700mW

Frequency - Transition

100MHz

Mounting Type

Surface Mount

Package / Case

6-SSOT, SuperSOT-6

Configuration

Dual

Transistor Polarity

NPN

Mounting Style

SMD/SMT

Collector- Emitter Voltage Vceo Max

80 V

Emitter- Base Voltage Vebo

4 V

Continuous Collector Current

0.5 A

Maximum Dc Collector Current

0.5 A

Power Dissipation

0.7 W

Maximum Operating Frequency

100 MHz

Maximum Operating Temperature

+ 150 C

Dc Collector/base Gain Hfe Min

100

Minimum Operating Temperature

- 55 C

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Meier Automation Equipment Co., Limited

Part Number:

FMBA06

Manufacturer:

FAIRCHILD/仙童

Quantity:

20 000

Current page: 1 of 5
Download datasheet (58Kb)

1998 Fairchild Semiconductor Corporation

Symbol

CEO

CBO

EBO

Thermal Characteristics

NPN Multi-Chip General Purpose Amplifier

This device is designed for general purpose amplifier applications at collector

currents to 300 mA. Sourced from Process 33.

Absolute Maximum Ratings*

, T

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

stg

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current - Continuous

Operating and Storage Junction Temperature Range

Total Device Dissipation

Thermal Resistance, Junction to Ambient

FMBA06

SuperSOT -6

Derate above 25 C

Dot denotes pin #1

Mark: .1G

pin #1

Characteristic

Parameter

= 25°C unless otherwise noted

FMBA06

Max

700

180

5.6

-55 to +150

Value

500

4.0

Units

mW/ C

Units

C/W

Related parts for FMBA06

FMBA06 Summary of contents

Page 1

... Symbol Characteristic P Total Device Dissipation D Derate above 25 C Thermal Resistance, Junction to Ambient R JA 1998 Fairchild Semiconductor Corporation 25°C unless otherwise noted A Parameter T = 25°C unless otherwise noted A Value Units 4.0 V 500 mA -55 to +150 C Max Units FMBA06 700 mW 5.6 mW/ C 180 C/W 4 ...

Page 2

Electrical Characteristics Symbol Parameter OFF CHARACTERISTICS V Collector-Emitter Sustaining Voltage* I (BR)CEO V Emitter-Base Breakdown Voltage (BR)EBO I Collector-Cutoff Current CEO I Collector-Cutoff Current CBO ON CHARACTERISTICS h DC Current Gain FE Collector-Emitter Saturation Voltage V sat CE( ) Base-Emitter ...

Page 3

Typical Characteristics Base-Emitter Saturation Voltage vs Collector Current = °C 0.8 25 °C 125 °C 0.6 0.4 0 COLLECTOR CURRE NT (mA) C Collector-Cutoff Current vs Ambient Temperature ...

Page 4

Typical Characteristics Gain Bandwidth Product vs Collector Current 400 350 300 250 200 150 100 COLLECTOR CURRENT (mA) C NPN Multi-Chip General Purpose Amplifier (continued) Power Dissipation vs Ambient Temperature 1 ...

Page 5

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FASTr™ Bottomless™ GlobalOptoisolator™ CoolFET™ GTO™ CROSSVOLT™ HiSeC™ DOME™ ISOPLANAR™ ...

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