KSB1151YS Fairchild Semiconductor, KSB1151YS Datasheet - Page 2

• Manufacturer Part Number: KSB1151YS
• Description: TRANSISTOR PNP 60V 5A TO-126
• Manufacturer: Fairchild Semiconductor

Specifications of KSB1151YS

• Transistor Type: PNP
• Current - Collector (ic) (max): 5A
• Voltage - Collector Emitter Breakdown (max): 60V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 200mA, 2A
• Dc Current Gain (hfe) (min) @ Ic, Vce: 160 @ 2A, 1V
• Power - Max: 1.3W
• Mounting Type: Through Hole
• Package / Case: TO-126-3
• Configuration: Single
• Transistor Polarity: PNP
• Mounting Style: Through Hole
• Collector- Emitter Voltage Vceo Max: 60 V
• Emitter- Base Voltage Vebo: - 7 V
• Maximum Dc Collector Current: 5 A
• Power Dissipation: 1300 mW
• Dc Collector/base Gain Hfe Min: 100
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Frequency - Transition: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

©2003 Fairchild Semiconductor Corporation
Typical Characteristics
Figure 3. Collector-Emitter Saturation Voltage
Figure 5. Reverse Bias Safe Operating Area
-10
-10
-0.01
-8
-6
-4
-2
-0
-0.1
-8
-6
-4
-2
-0
-10
-1
Base-Emitter Saturation Voltage
Figure 1. Static Characteristic
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
-20
V
-0.4
CE
[V], COLLECTOR-EMITTER VOLTAGE
I
C
[A], COLLECTOR CURRENT
-0.1
-40
-0.8
V
BE
(sat)
-60
-1.2
I
I
B
B
-1
I
= -20mA
= -10mA
B
= 0
-80
-1.6
I
C
= 10 I
-100
B
-2.0
-10
Figure 6. Derating Curve of Safe Operating Areas
-1000
-100
-0.1
-10
-10
-1
160
140
120
100
-1
Figure 4. Forward Bias Operating Area
80
60
40
20
-0.01
-1
0
0
I
I
C
C
(Pulse)MAX
(DC)MAX
25
V
Figure 2. DC current Gain
CE
[V], COLLECTOR-EMITTER VOLTAGE
I
C
50
[A], COLLECTOR CURRENT
T
C
[
-0.1
o
C], CASE TEMPERATURE
75
-10
100
125
-1
150
V
CE
V
= -1V
CE
175
= -2V
-100
-10
Rev. B, May 2003
200