TIP32 Fairchild Semiconductor, TIP32 Datasheet - Page 2

• Manufacturer Part Number: TIP32
• Description: TRANS GP PNP 3A 40V TO-220
• Manufacturer: Fairchild Semiconductor

Specifications of TIP32

• Transistor Type: PNP
• Current - Collector (ic) (max): 3A
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 1.2V @ 375mA, 3A
• Current - Collector Cutoff (max): 200µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 10 @ 3A, 4V
• Power - Max: 2W
• Frequency - Transition: 3MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Polarity: PNP
• Mounting Style: Through Hole
• Collector- Emitter Voltage Vceo Max: 40 V
• Emitter- Base Voltage Vebo: - 5 V
• Maximum Dc Collector Current: 3 A
• Power Dissipation: 40 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current: - 3 A
• Dc Collector/base Gain Hfe Min: 10
• Maximum Operating Frequency: 3 MHz
• Minimum Operating Temperature: - 65 C
• Number Of Elements: 1
• Collector-emitter Voltage: 40V
• Collector-base Voltage: 40V
• Emitter-base Voltage: 5V
• Collector Current (dc) (max): 3A
• Dc Current Gain (min): 25
• Frequency (max): 3MHz
• Operating Temp Range: -65C to 150C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3 +Tab
• Package Type: TO-220
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: TIP32FS

TIP32/TIP32A/TIP32B/TIP32C Rev. A
© 2008 Fairchild Semiconductor Corporation
Electrical Characteristics
* Pulse Test: PW≤300ms, Duty Cycle≤2%
V
I
I
I
h
V
V
f
CEO
EBO
CES
T
FE
CEO
CE
BE
Symbol
(sat)
(sat)
(sus)
* Collector-Emitter Sustaining Voltage
* DC Current Gain
* Collector-Emitter Saturation Voltage
* Base-Emitter Saturation Voltage
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
Current Gain Bandwidth Product
Parameter
: TIP32/32A
: TIP32B/32C
T
C
: TIP32
: TIP32A
: TIP32B
: TIP32C
: TIP32
: TIP32A
: TIP32B
: TIP32C
=25°C unless otherwise noted
I
V
V
V
V
V
V
V
V
V
I
V
V
C
C
CE
CE
CE
CE
CE
CE
EB
CE
CE
CE
CE
2
= - 30mA, I
= - 3A, I
= - 30V, I
= - 60V, I
= - 40V, V
= - 60V, V
= - 80V, V
= - 100V, V
= - 5V, I
= - 4V, I
= - 4V, I
= - 4V, I
= - 10V, I
B
Test Condition
C
= - 375mA
C
C
C
B
B
C
B
= 0
= - 1A
= - 3A
= - 3A
EB
EB
EB
= 0
= 0
= 0
= - 500mA, f = 1MHz
CE
= 0
= 0
= 0
= 0
Min.
-100
3.0
-40
-60
-80
25
10
- 200
- 200
- 200
- 200
Max.
- 0.3
- 0.3
- 1.2
- 1.8
www.fairchildsemi.com
- 1
50
Units
MHz
mA
mA
mA
μA
μA
μA
μA
V
V
V
V
V
V