MT46V32M16P-5B:F Micron Technology Inc, MT46V32M16P-5B:F Datasheet - Page 21

DRAM Chip DDR SDRAM 512M-Bit 32Mx16 2.6V 66-Pin TSOP Tray

MT46V32M16P-5B:F

Manufacturer Part Number
MT46V32M16P-5B:F
Description
DRAM Chip DDR SDRAM 512M-Bit 32Mx16 2.6V 66-Pin TSOP Tray
Manufacturer
Micron Technology Inc
Type
DDR SDRAMr
Datasheet

Specifications of MT46V32M16P-5B:F

Density
512 Mb
Maximum Clock Rate
400 MHz
Package
66TSOP
Address Bus Width
15 Bit
Operating Supply Voltage
2.6 V
Maximum Random Access Time
0.7 ns
Operating Temperature
0 to 70 °C
Format - Memory
RAM
Memory Type
DDR SDRAM
Memory Size
512M (32Mx16)
Speed
5ns
Interface
Parallel
Voltage - Supply
2.5 V ~ 2.7 V
Package / Case
66-TSOP
Organization
32Mx16
Address Bus
15b
Access Time (max)
700ps
Operating Supply Voltage (typ)
2.6V
Package Type
TSOP
Operating Temp Range
0C to 70C
Operating Supply Voltage (max)
2.7V
Operating Supply Voltage (min)
2.5V
Supply Current
215mA
Pin Count
66
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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Table 13:
Figure 11:
PDF: 09005aef80a1d9d4/Source: 09005aef82a95a3a
DDR_x4x8x16_Core2.fm - 512Mb DDR: Rev. N; Core DDR Rev. B 2/09 EN
Parameter/Condition
Clock input mid-point voltage: CK and CK#
Clock input voltage level: CK and CK#
Clock input differential voltage: CK and CK#
Clock input differential voltage: CK and CK#
Clock input crossing point voltage: CK and CK#
–0.30V
2.80V
1.45V
1.25V
1.05V
CK#
CK
Clock Input Operating Conditions
Notes: 1–5, 16, 17, 31 apply to the entire table; Notes appear on page 35;
0°C ≤ T
SSTL_2 Clock Input
X X
Notes:
A
≤ +70°C; V
1.
2.
3. CK and CK# must cross in this region.
4.
5. CK and CK# must have a minimum 700mV peak-to-peak swing.
6. For AC operation, all DC clock requirements must also be satisfied.
7. Numbers in diagram reflect nominal values for all devices other than -5B.
CK or CK# may not be more positive than V
This provides a minimum of 1.15V to a maximum of 1.35V and is always half of V
CK and CK# must meet at least V
DD
Q = +2.5V ±0.2V, V
Symbol
V
DD
V
V
V
V
MP
IN
ID
ID
IX
= +2.5V ±0.2V (V
(
(
(
(
(
AC
DC
DC
AC
DC
)
)
)
)
21
)
X X
ID
(
DC
0.5 × V
)
MIN when static and is centered around V
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Min
1.15
0.36
–0.3
Electrical Specifications – DC and AC
0.7
DD
DD
DD
Q - 0.2
Q + 0.3V or more negative than V
Q = +2.6V ±0.1V, V
512Mb: x4, x8, x16 DDR SDRAM
0.5 × V
V
V
V
DD
DD
DD
Max
1.35
V
Q + 0.3
Q + 0.6
Q + 0.6
DD
Maximum clock level
MP
Minimum clock level 1
Q + 0.2
(
DC
DD
©2000 Micron Technology, Inc. All rights reserved.
)
2 V
= +2.6V ±0.1V for -5B)
IX
(
AC
Units
)
3
V
V
V
V
V
SS
DD
MP
V
- 0.3V.
1
ID
Q.
(
(
DC
DC
)
)
Notes
V
.
4
7, 10
ID
7, 9
10
7
9
(
AC
) 5

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