MT46V32M16P-5B:F Micron Technology Inc, MT46V32M16P-5B:F Datasheet - Page 28

• Manufacturer Part Number: MT46V32M16P-5B:F
• Description: DRAM Chip DDR SDRAM 512M-Bit 32Mx16 2.6V 66-Pin TSOP Tray
• Manufacturer: Micron Technology Inc
• Type: DDR SDRAMr

Specifications of MT46V32M16P-5B:F

• Density: 512 Mb
• Maximum Clock Rate: 400 MHz
• Package: 66TSOP
• Address Bus Width: 15 Bit
• Operating Supply Voltage: 2.6 V
• Maximum Random Access Time: 0.7 ns
• Operating Temperature: 0 to 70 °C
• Format - Memory: RAM
• Memory Type: DDR SDRAM
• Memory Size: 512M (32Mx16)
• Speed: 5ns
• Interface: Parallel
• Voltage - Supply: 2.5 V ~ 2.7 V
• Package / Case: 66-TSOP
• Organization: 32Mx16
• Address Bus: 15b
• Access Time (max): 700ps
• Operating Supply Voltage (typ): 2.6V
• Package Type: TSOP
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 2.7V
• Operating Supply Voltage (min): 2.5V
• Supply Current: 215mA
• Pin Count: 66
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Table 20:
PDF: 09005aef80a1d9d4/Source: 09005aef82a95a3a
DDR_x4x8x16_Core2.fm - 512Mb DDR: Rev. N; Core DDR Rev. B 2/09 EN
AC Characteristics
Parameter
DQS write preamble setup time
DQS write postamble
Write recovery time
Internal WRITE-to-READ command delay
Exit SELF REFRESH-to-non-READ command
Exit SELF REFRESH-to-READ command
Data valid output window
Electrical Characteristics and Recommended AC Operating Conditions (-6T) (continued)
Notes: 1–6, 16–18, 34 apply to the entire table; Notes appear on page 35;
0°C ≤ T
A
≤ +70°C; V
DD
Q = +2.5V ±0.2V, V
DD
= +2.5V ±0.2V
28
Symbol
t
WPRES
t
t
t
t
WPST
XSNR
XSRD
t
WTR
n/a
WR
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Electrical Specifications – DC and AC
512Mb: x4, x8, x16 DDR SDRAM
Min
200
0.4
15
75
0
1
t
-6T (TSOP)
QH -
t
DQSQ
Max
0.6
–
–
–
–
–
©2000 Micron Technology, Inc. All rights reserved.
Units
t
t
t
ns
CK
ns
CK
ns
CK
ns
Notes
21, 22
20
26