BCW 61A E6327 Infineon Technologies, BCW 61A E6327 Datasheet - Page 2

• Manufacturer Part Number: BCW 61A E6327
• Description: TRANSISTOR PNP AF 32V SOT-23
• Manufacturer: Infineon Technologies

Specifications of BCW 61A E6327

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Type: PNP
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 32V
• Vce Saturation (max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 120 @ 2mA, 5V
• Power - Max: 330mW
• Frequency - Transition: 250MHz
• Mounting Type: Surface Mount
• Configuration: Single
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Maximum Operating Frequency: 250 MHz
• Collector- Emitter Voltage Vceo Max: 32 V
• Continuous Collector Current: 0.1 A
• Power Dissipation: 330 mW
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: BCW61AE6327XT; SP000010621

Maximum Ratings
Parameter
Collector-emitter voltage
BCW61...
BCX71...
Collector-base voltage
BCW61...
BCX71...
Emitter-base voltage
Collector current
Peak collector current
Peak base current
Total power dissipation-
T
Junction temperature
Storage temperature
Thermal Resistance
Parameter
Junction - soldering point
1
For calculation of R
S
71 °C
thJA
please refer to Application Note Thermal Resistance
1)
2
Symbol
V
V
V
I
I
I
P
T
T
Symbol
R
C
CM
BM
j
stg
CEO
CBO
EBO
tot
thJS
-65 ... 150
BCW61..., BCX71...
Value
Value
100
200
200
330
150
32
45
32
45
240
5
2007-10-18
Unit
V
mA
mW
-
°C
Unit
K/W