BCW 67B E6327 Infineon Technologies, BCW 67B E6327 Datasheet - Page 4

• Manufacturer Part Number: BCW 67B E6327
• Description: TRANSISTOR PNP AF 32V SOT-23
• Manufacturer: Infineon Technologies

Specifications of BCW 67B E6327

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Type: PNP
• Current - Collector (ic) (max): 800mA
• Voltage - Collector Emitter Breakdown (max): 32V
• Vce Saturation (max) @ Ib, Ic: 700mV @ 50mA, 500mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 160 @ 100mA, 1V
• Power - Max: 330mW
• Frequency - Transition: 200MHz
• Mounting Type: Surface Mount
• Configuration: Single
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Maximum Operating Frequency: 200 MHz
• Collector- Emitter Voltage Vceo Max: 32 V
• Continuous Collector Current: 0.8 A
• Power Dissipation: 330 mW
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: BCW67BE6327XT; SP000015035

DC Electrical Characteristics
Parameter
Characteristics
Collector-emitter saturation voltage
I
I
Base emitter saturation voltage
I
I
AC Characteristics
Transition frequency
I
Collector-base capacitance
V
Emitter-base capacitance
V
1
C
C
C
C
C
Pulse test: t < 300µs; D < 2%
CB
EB
= 100 mA, I
= 500 mA, I
= 100 mA, I
= 500 mA, I
= 50 mA, V
= 0.5 V, f = 1 MHz
= 10 V, f = 1 MHz
CE
B
B
B
B
= 10 mA
= 50 mA
= 10 mA
= 50 mA
= 5 V, f = 20 MHz
1)
1)
4
f
C
C
Symbol
V
V
T
CEsat
BEsat
cb
eb
min.
-
-
-
-
-
-
-
Values
typ.
200
60
BCW67, BCW68
6
-
-
-
-
max.
1.25
0.3
0.7
2
2007-04-20
-
-
-
MHz
pF
Unit
V