BCV 48 E6327 Infineon Technologies, BCV 48 E6327 Datasheet - Page 6

• Manufacturer Part Number: BCV 48 E6327
• Description: TRANSISTOR DARL PNP AF SOT-89
• Manufacturer: Infineon Technologies

Specifications of BCV 48 E6327

• Package / Case: SOT-89
• Transistor Type: PNP - Darlington
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 60V
• Vce Saturation (max) @ Ib, Ic: 1V @ 100µA, 100mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 10000 @ 100mA, 5V
• Power - Max: 1W
• Frequency - Transition: 200MHz
• Mounting Type: Surface Mount
• Configuration: Single
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 60 V
• Emitter- Base Voltage Vebo: 10 V
• Collector- Base Voltage Vcbo: 80 V
• Maximum Dc Collector Current: 0.5 A
• Maximum Collector Cut-off Current: 0.1 uA
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 2000
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: BCV48E6327XT; SP000010880

Transition frequency f
V
Total power dissipation P
f
T
CE
MHz
mW
1200
10
10
10
800
600
400
200
= 5 V
5
3
2
1
10
0
0
BCV 28/48
0
15
30
45
10
1
60
T
75
=
90 105 120
tot
10
(I
= (T
C
2
)
mA
S
C
EHP00312
)
T
°C
S
10
150
3
6
Collector-base capacitance C
Emitter-base capacitance C
Permissible Pulse Load
P
P
P
totmax
tot max
tot
DC
pF
16
12
10
10
10
10
8
6
4
2
0
5
5
5
0
/P
2
1
0
10
BCV 28/48
totDC
-6
10
4
=
-5
10
(t
8
p
CEB
-4
D
)
D
0.005
0.01
0.02
0.05
0.1
0.2
0.5
0
=
=
t
T
10
p
12
BCV28, BCV48
-3
t
p
eb
10
-2
16
T
cb
2007-04-20
= (V
= (V
t
p
EHP00310
V
s
V
EB
CB
CCB
CB
)
(V
10
22
)
EB
0
)