BCP 53-10 E6327 Infineon Technologies, BCP 53-10 E6327 Datasheet - Page 2

• Manufacturer Part Number: BCP 53-10 E6327
• Description: TRANSISTOR PNP AF 80V SOT-223
• Manufacturer: Infineon Technologies

Specifications of BCP 53-10 E6327

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Transistor Type: PNP
• Current - Collector (ic) (max): 1A
• Voltage - Collector Emitter Breakdown (max): 80V
• Vce Saturation (max) @ Ib, Ic: 500mV @ 50mA, 500mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 63 @ 150mA, 2V
• Power - Max: 2W
• Frequency - Transition: 125MHz
• Mounting Type: Surface Mount
• Configuration: Single Dual Collector
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Maximum Operating Frequency: 125 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 80 V
• Continuous Collector Current: 1 A
• Power Dissipation: 1500 mW
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: BCP5310E6327XT; SP000010697

Maximum Ratings
Parameter
Collector-emitter voltage
BCP51
BCP52
BCP53
Collector-base voltage
BCP51
BCP52
BCP53
Emitter-base voltage
Collector current
Peak collector current, t
Base current
Peak base current
Total power dissipation-
T
Junction temperature
Storage temperature
Thermal Resistance
Parameter
Junction - soldering point
1
For calculation of R
S
≤ 120°C
thJA
please refer to Application Note Thermal Resistance
p
1)
≤ 10 ms
2
Symbol
V
V
V
I
I
I
I
P
T
T
Symbol
R
C
CM
B
BM
j
stg
CEO
CBO
EBO
tot
thJS
-65 ... 150
BCP51...-BCP53...
Value
Value
≤ 15
100
100
200
150
1.5
45
60
80
45
60
5
1
2
2008-10-10
Unit
V
A
mA
W
°C
Unit
K/W