BCP 53-10 E6327 Infineon Technologies, BCP 53-10 E6327 Datasheet - Page 4

• Manufacturer Part Number: BCP 53-10 E6327
• Description: TRANSISTOR PNP AF 80V SOT-223
• Manufacturer: Infineon Technologies

Specifications of BCP 53-10 E6327

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Transistor Type: PNP
• Current - Collector (ic) (max): 1A
• Voltage - Collector Emitter Breakdown (max): 80V
• Vce Saturation (max) @ Ib, Ic: 500mV @ 50mA, 500mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 63 @ 150mA, 2V
• Power - Max: 2W
• Frequency - Transition: 125MHz
• Mounting Type: Surface Mount
• Configuration: Single Dual Collector
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Maximum Operating Frequency: 125 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 80 V
• Continuous Collector Current: 1 A
• Power Dissipation: 1500 mW
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: BCP5310E6327XT; SP000010697

h
DC current gain h
V
Base-emitter saturation voltage
I
Ι
C
FE
C
CE
= ƒ (V
= 2 V
mA
10
10
10
10
10
10
10
10
10
5
5
5
4
3
2
1
0
10
3
2
1
0
0
BEsat
BCP 51...53
BCP 51...53
0
100
-50 C
25 C
C
), h
0.2
10
FE
1
FE
0.4
= 10
= ƒ (I
100
25 C
-50C
10
0.6
C
2
C
)
0.8
10
3
Ι
V
C
EHP00261
V
EHP00263
BEsat
mA
10
1.2
4
4
Ι
Collector-emitter saturation voltage
I
Collector cutoff current I
V
Ι
C
CBO
C
CBO
= ƒ (V
mA
10
10
10
10
10
10
nA
10
10
10
10
10
5
5
5
= 30 V
4
3
2
1
0
4
3
2
1
0
-1
0
CEsat
BCP 51...53
0
BCP 51...53
), h
0.2
FE
50
= 10
100
-50
25 C
BCP51...-BCP53...
C
C
0.4
max
CBO
100
= ƒ (T
2008-10-10
0.6
typ
V
T
A
EHP00264
CEsat
EHP00262
A
C
V
)
150
0.8