BCP 53-10 E6327 Infineon Technologies, BCP 53-10 E6327 Datasheet - Page 5

• Manufacturer Part Number: BCP 53-10 E6327
• Description: TRANSISTOR PNP AF 80V SOT-223
• Manufacturer: Infineon Technologies

Specifications of BCP 53-10 E6327

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Transistor Type: PNP
• Current - Collector (ic) (max): 1A
• Voltage - Collector Emitter Breakdown (max): 80V
• Vce Saturation (max) @ Ib, Ic: 500mV @ 50mA, 500mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 63 @ 150mA, 2V
• Power - Max: 2W
• Frequency - Transition: 125MHz
• Mounting Type: Surface Mount
• Configuration: Single Dual Collector
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Maximum Operating Frequency: 125 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 80 V
• Continuous Collector Current: 1 A
• Power Dissipation: 1500 mW
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: BCP5310E6327XT; SP000010697

Transition frequency f
V
Permissible Pulse Load R
f
T
CE
10
10
10
10
= 10 V
MHz
10
10
10
-1
5
5
2
1
0
10
3
1
2
10
-6
BCP 51...53
0
10
-5
10
10
-4
1
T
10
= ƒ (I
-3
thJS
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0
10
10
C
2
-2
)
= ƒ (t
Ι
mA
C
EHP00260
s
T P
p
)
10
10
3
0
5
Total power dissipation P
Permissible Pulse Load
P
totmax
10
10
10
10
W
2.4
1.6
1.2
0.8
0.4
-
0
3
2
1
0
10
0
/P
-6
totDC
15
10
30
-5
= ƒ (t
45
10
p
-4
60
)
BCP51...-BCP53...
10
75
-3
90 105 120 °C
tot
10
= ƒ (T
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
-2
2008-10-10
S
s
)
T
t
p
S
150
10
0