BDP 949 H6327 Infineon Technologies, BDP 949 H6327 Datasheet - Page 5

• Manufacturer Part Number: BDP 949 H6327
• Description: TRANS NPN AF 60V 3A SOT223
• Manufacturer: Infineon Technologies

Specifications of BDP 949 H6327

• Transistor Type: NPN
• Current - Collector (ic) (max): 3A
• Voltage - Collector Emitter Breakdown (max): 60V
• Vce Saturation (max) @ Ib, Ic: 500mV @ 200mA, 2A
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 500mA, 1V
• Power - Max: 5W
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -

Collector cutoff current I
V
Total power dissipation P
CB
10
10
nA
10
10
10
10
10
W
= 45 V
5.5
4.5
3.5
2.5
1.5
0.5
-1
4
3
2
1
0
5
4
3
2
1
0
0
0
15
20
30
max
40
45
60
60
75
80
CBO
90 105 120 °C
tot
100
= ƒ ( T
= ƒ ( T
typ
120 °C
S
)
A
T
t
s
A
)
150
150
5
Collector-base capacitance C
Emitter-base capacitance C
Permissible Pulse Load R
10
500
pF
400
350
300
250
200
150
100
10
10
10
50
-1
0
2
1
0
10
0
-6
BDP947, BDP949, BDP953
10
4
-5
10
8
-4
CEB
10
12
-3
thJS
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0
eb
10
16
-2
cb
2009-05-28
= ƒ ( t
= ƒ ( V
= ƒ ( V
V
s
V
t
EB
p
p
CB
)
CCB
CB
)
(V
22
10
)
EB
0
)