2N5415 Fairchild Semiconductor, 2N5415 Datasheet - Page 2

• Manufacturer Part Number: 2N5415
• Description: PNP 10W 200V 1A TRANSISTOR
• Manufacturer: Fairchild Semiconductor

Specifications of 2N5415

• Transistor Type: PNP
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 200V
• Vce Saturation (max) @ Ib, Ic: 2.5V @ 5mA, 50mA
• Current - Collector Cutoff (max): 50µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 30 @ 50mA, 10V
• Power - Max: 1W
• Mounting Type: Through Hole
• Package / Case: TO-39
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Frequency - Transition: -

*
Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
OFF CHARACTERISTICS
V
V
V
I
I
I
I
ON CHARACTERISTICS*
C
C
h
Re
IS /
h
V
V
SMALL SIGNAL CHARACTERISTICS
Symbol
CBO
CEX
CEO
EBO
FE
fe
(BR)CEO
(BR)CBO
(BR)EBO
CE(
BE(
ob
ib
Electrical Characteristics
(hie)
b
on
sat
)
)
Collector-Emitter Breakdown Voltage*
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
Output Capacitance
Input Capacitance
Small-Signal Current Gain
Input Resistance
Safe Operating Area
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Parameter
TA = 25°C unless otherwise noted
I
I
I
V
V
V
V
V
V
I
f = 5.0 MHz
I
f = 1.0 kHz
V
V
V
I
I
C
C
E
C
C
C
C
CB
CE
CE
EB
CB
EB
CE
CE
CE
= 100 µA, I
= 50 mA, I
= 100 µA, I
= 5.0 mA, V
= 5.0 mA, V
= 50 mA, I
= 50 mA, V
= 4.0 V, I
= 5.0 V, f = 1.0 MHz
= 175 V
= 200 V, V
= 150 V
= 10 V, f = 1.0 MHz
= 10 V, I
= 100 V, t = 100 mS
= 10 V, I
Test Conditions
B
C
C
B
C
C
E
CE
= 0
CE
CE
= 5.0 mA
= 50 mA
= 5.0 mA
BE
= 0
= 0
= 0
= 10 V
= 10 V,
= 10 V,
= 1.5 V (rev)
PNP High Voltage Amplifier
Min
200
200
100
4.0
3.0
25
30
Max
300
150
50
50
50
20
2.5
1.5
15
75
(continued)
Units
mA
µA
µA
µA
µA
pF
pF
Ω
V
V
V
V
V