PN3566 Fairchild Semiconductor, PN3566 Datasheet
PN3566
Manufacturer Part Number
PN3566
Description
TRANSISTOR AMP NPN SS GP TO-92
Manufacturer
Fairchild Semiconductor
Datasheet
1.PN3566.pdf
(3 pages)
Specifications of PN3566
Transistor Type
NPN
Current - Collector (ic) (max)
600mA
Voltage - Collector Emitter Breakdown (max)
30V
Vce Saturation (max) @ Ib, Ic
1V @ 10mA, 100mA
Dc Current Gain (hfe) (min) @ Ic, Vce
150 @ 10mA, 10V
Power - Max
625mW
Mounting Type
Through Hole
Package / Case
TO-92-3 (Standard Body), TO-226
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Frequency - Transition
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
PN3566
Manufacturer:
FSC
Quantity:
15 840
Part Number:
PN3566
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
©2004 Fairchild Semiconductor Corporation
NPN General Purpose Amplifier
• This device is for use as a medium amplifier and switch requiring
• Sourced from process 19.
Absolute Maximum Ratings
Electrical Characteristics
* Pulse Test: Pulse Width
Thermal Characteristics
V
V
V
I
T
Off Characteristics
V
V
V
I
I
On Characteristics
h
V
V
Small Signal Characteristics
C
P
R
R
C
Symbol
CBO
EBO
collector currents up 300mA.
FE
J,
CEO
CBO
EBO
(BR)CEO
(BR)CBO
(BR)EBO
CE
BE
D
obo
Symbol
JA
JC
T
Symbol
(sat)
(on)
STG
Collector-Emitter Breakdown Voltage *
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage *
Base-Emitter On Voltage
Output Capacitance
Total Device Dissipation
Derate above 25 C
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Operating and Storage Junction Temperature Range
300ms, Duty Cycle
Parameter
2.0%
T
a
T
=25 C unless otherwise noted
a
=25 C unless otherwise noted
T
Parameter
a
- Continuous
=25 C unless otherwise noted
Parameter
PN3566
I
I
I
V
V
V
V
I
V
V
C
C
E
C
CB
EB
CE
CE
CE
CB
= 100 A, I
= 10 A, I
= 100mA, I
= 30mA, I
= 20V, I
= 5V, I
= 10V, I
= 10V, I
= 1V, I
= 10V, I
Test Condition
C
C
C
B
E
C
C
E
E
= 0
= 100mA
B
= 0
= 0
= 0
= 2.0mA
= 10mA
= 0
= 0
= 10mA
1. Emitter 2. Base 3. Collector
1
Min.
- 55 ~ 150
150
30
40
80
5
Value
600
30
40
5
Max.
83.3
625
200
5
Typ.
TO-92
Max.
600
1.0
0.9
50
25
10
Rev. A, October 2004
mW/ C
Units
mW
C/W
C/W
Units
mA
V
V
V
C
Units
nA
pF
V
V
V
V
V
A
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PN3566 Summary of contents
Page 1
... Pulse Test: Pulse Width 300ms, Duty Cycle Thermal Characteristics Symbol P Total Device Dissipation D Derate above Thermal Resistance, Junction to Ambient JA R Thermal Resistance, Junction to Case JC ©2004 Fairchild Semiconductor Corporation PN3566 T =25 C unless otherwise noted a Parameter - Continuous T =25 C unless otherwise noted a Test Condition I = 30mA ...
Page 2
... Package Dimensions 0.46 0.10 1.27TYP [1.27 ] 0.20 ©2004 Fairchild Semiconductor Corporation TO-92 +0.25 4.58 –0.15 1.27TYP [1.27 ] 0.20 3.60 0.20 (R2.29) +0.10 0.38 –0.05 Dimensions in Millimeters Rev. A, October 2004 ...
Page 3
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ® A CEx™ FAST FASTr™ ActiveArray™ FPS™ Bottomless™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ ...