FJL6920TU Fairchild Semiconductor, FJL6920TU Datasheet - Page 3

• Manufacturer Part Number: FJL6920TU
• Description: TRANSISTOR NPN 800V 20A TO-264
• Manufacturer: Fairchild Semiconductor

Specifications of FJL6920TU

• Transistor Type: NPN
• Current - Collector (ic) (max): 20A
• Voltage - Collector Emitter Breakdown (max): 800V
• Vce Saturation (max) @ Ib, Ic: 3V @ 2.75A, 11A
• Current - Collector Cutoff (max): 1mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 5.5 @ 11A, 5V
• Power - Max: 200W
• Mounting Type: Through Hole
• Package / Case: TO-264
• Transistor Polarity: NPN
• Mounting Style: Through Hole
• Collector- Emitter Voltage Vceo Max: 800 V
• Emitter- Base Voltage Vebo: 6 V
• Maximum Dc Collector Current: 20 A
• Power Dissipation: 200 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current: 20 A
• Dc Collector/base Gain Hfe Min: 55
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

©2001 Fairchild Semiconductor Corporation
Typical Characteristics
Figure 9. Forward Bias Safe Operating Area
Figure 7. Resistive Load Switching Time
0.01
100
300
250
200
150
100
0.1
0.01
100
10
50
0.1
10
1
0
1
0
1
I
I
T
Single Pulse
C
C
C
(DC)
(Pulse)
Figure 11. Power Derating
= 25
V
25
CE
I
o
B1
C
[V], COLLECTOR-EMITTER VOLTAGE
T
[A], FORWARD BASE CURRENT
t = 100ms
C
10
1
50
[
O
C], CASE TEMPERATURE
75
t = 10ms
t
STG
t
F
100
100
t = 1ms
V
I
C
CC
= 10A, I
125
= 200V,
1000
10
(Continued)
B2
150
= - 4A
10000
175
Figure 10. Reverse Bias Safe Operating Area
Figure 8. Resistive Load Switching Time
0.1
10
1
40
35
30
25
20
15
10
5
1
1
10
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
I
C
[A], COLLECTOR CURRENT
100
V
BE
t
F
(off) = -3V
R
V
CC
B2
V
I
1000
10
B1
CC
= 0, I
= 30V, L = 200 H
t
= 2A, I
STG
= 200V,
B1
V
= 15A
BE
B2
(off) = -6V
= - 4A
Rev. A, May 2001
10000