FJY3014R Fairchild Semiconductor, FJY3014R Datasheet - Page 68

• Manufacturer Part Number: FJY3014R
• Description: TRANS NPN 50V 100MA SOT-523F
• Manufacturer: Fairchild Semiconductor

Specifications of FJY3014R

• Transistor Type: NPN - Pre-Biased
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 4.7K
• Resistor - Emitter Base (r2) (ohms): 47K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 68 @ 5mA, 5V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 500µA, 10mA
• Frequency - Transition: 250MHz
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: SC-89-3, SOT-523F
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FJY3014RTR

RF Amplifier Transistors
68
Products
SOT-23 NPN Configuration
KST5179
MMBT5179
MMBT918
KSC2757
MMBT5770
KSC2223
KSC2756
KSC3123
KST10
MMBTH10
MMBTH11
KSC2755
KSC2715
MMBTH24
KST24
MMBTH10RG
MMBTH34
SOT-23 PNP Configuration
MMBTH81
TO-92 NPN Configuration
2N3663
KSP5179
MPS5179
PN5179
2N5770
PN3563
PN918
SS9018
KSC1730
BF494
KSC1674
KSC1187
KSP10
KSC388
FPNH10
MPSH10
MPSH11
BF199
KSC1393
KSC838
KSC1675
www.fairchildsemi.com
V
(V)
1
1
15
15
15
0
0
0
5
5
5
30
30
30
30
40
40
0
1
1
1
1
15
15
15
15
15
0
0
0
5
5
5
5
5
5
30
30
30
CEO
V
(V)
0
0
30
30
30
30
30
30
30
30
30
30
35
40
40
40
40
0
30
0
0
0
30
30
30
30
30
30
30
30
30
30
30
30
30
40
30
35
50
CBO
V
(V)
EBO


3
5
4
4
4
3
3
3
3
5
4
4
4
4
4
3
3



4

3
5
5
5
4
4
3
4
3
3
3
4
4
4
5
Max
0.045
0.05
0.05
0.05
0.05
0.09
0.0
0.03
0.05
0.05
0.05
0.0
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.0
0.03
0.05
0.05
0.05
0.05
0.05
0.0
0.03
0.05
0.1
(A)
I
–
–
–
C
(MHz)
1100
900
900
600
800
400
400
500
900
650
650
650
400
100
400
400
450
500
600
700
900
900
900
600
600
700
800
400
400
650
300
650
650
650
400
100
150
F
–
–
T
Min
5
5
0
60
50
40
60
60
60
60
60
60
70
30
30
50
40
60
0
5
5
5
50
0
0
8
40
65
40
40
60
0
60
60
60
38
40
40
40
Max
50
40
00
180
40
40
40
40
10
50
50
50
00
00
198
40
0
40
40
00
180
40
40
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
@ V
h
FE
.9mm 3 1.3mm 3 1.14mm (Refer to p. 7 for detailed package drawing)
.9mm 3 1.3mm 3 1.14mm (Refer to p. 7 for detailed package drawing)
1.5
10
10
10
10
10
10
10
10
1
10
10
15
10
10
10
10
10
10
10
10
10
10
10
10
10
1
CE
1
1
1
6
6
1
1
1
1
5
6
6
(V) @ I
C
1.5
3
3
3
5
8
1
5
5
4
4
4
3

8
8
1
7
5
8
3
3
3
8
8
3
1
5
1
1

4
4
4
4
7


1
(mA) V
(Refer to p. 78 for detailed package drawing)
CE (sat)
0.4
0.4
0.4
0.5
0.4
0.3
0.5
0.5
0.5
0.5
0.4
0.
0.5
0.4
0.4
0.4
0.4
0.4
0.5
0.5
0.3
0.5
0.
0.5
0.5
0.5
0.
0.4
0.3
–
–
–
–
–
–
–
–
–
–
Saturation Voltage
(V) @ I
Small Signal
Small Signal
Transistors & Diodes
Transistors & Diodes
Selection Guide
Selection Guide
C
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
15
10
10
10
4
4
4
5
–
–
–
–
4
4
4
4
–
(mA) @ I
–
–
–
–
–
B
0.4
0.4
0.4
0.5
0.4
1.5
0.4
0.4
0.4
1
1
1
1
1
1
1
1
5
1
1
1
1
1
1
1
1
5
1
1
–
–
–
–
–
–
–
–
–
–
(mA)