FJV3114RMTF Fairchild Semiconductor, FJV3114RMTF Datasheet - Page 2

• Manufacturer Part Number: FJV3114RMTF
• Description: TRANSISTOR NPN 50V 100MA SOT-23
• Manufacturer: Fairchild Semiconductor

Specifications of FJV3114RMTF

• Transistor Type: NPN - Pre-Biased
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 4.7K
• Resistor - Emitter Base (r2) (ohms): 47K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 68 @ 5mA, 5V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 500µA, 10mA
• Frequency - Transition: 250MHz
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FJV3114R Rev. B
Typical Performance Characteristics
Figure 1. DC current Gain
Figure 3. Collector-Emitter Saturation Voltage
1000
100
1000
100
10
10
1
1
1
I
I
C
C
[mA], COLLECTOR CURRENT
[mA], COLLECTOR CURRENT
10
10
100
V
R
R
CE
1
2
I
R
R
C
= 4.7K
= 47K
1
2
= 5V
= 10I
= 4.7K
= 47K
1000
B
100
2
Figure 2. Input On Voltage
Figure 4. Power Derating
0.1
10
280
240
200
160
120
1
0.1
80
40
0
0
25
I
C
[mA], COLLECTOR CURRENT
T
a
[
50
o
C], AMBIENT TEMPERATURE
1
75
100
10
125
V
R
R
CE
1
2
= 4.7K
= 47K
=0.3V
150
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100
175