BCR 553 E6327 Infineon Technologies, BCR 553 E6327 Datasheet - Page 2

• Manufacturer Part Number: BCR 553 E6327
• Description: TRANSISTOR PNP DGTL AF SOT-23
• Manufacturer: Infineon Technologies

Specifications of BCR 553 E6327

• Package / Case: TO-236-3, SC-59, SOT-23-3
• Transistor Type: PNP - Pre-Biased
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 2.2K
• Resistor - Emitter Base (r2) (ohms): 2.2K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 40 @ 50mA, 5V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
• Frequency - Transition: 150MHz
• Power - Max: 330mW
• Mounting Type: Surface Mount
• Configuration: Single
• Transistor Polarity: PNP
• Typical Input Resistor: 2.2 KOhms
• Typical Resistor Ratio: 1
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 50 V
• Peak Dc Collector Current: 500 mA
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BCR553E6327XT; SP000010854

Electrical Characteristics at T
Parameter
DC Characteristics
Collector-emitter breakdown voltage
I
Collector-base breakdown voltage
I
Collector-base cutoff current
V
Emitter-base cutoff current
V
DC current gain-
I
Collector-emitter saturation voltage
I
Input off voltage
I
Input on voltage
I
Input resistor
Resistor ratio
AC Characteristics
Transition frequency
I
1
C
C
C
C
C
C
C
Pulse test: t < 300µs; D < 2%
CB
EB
= 100 µA, I
= 10 µA, I
= 50 mA, V
= 50 mA, I
= 100 µA, V
= 10 mA, V
= 50 mA, V
= 10 V, I
= 50 V, I
E
B
E
C
B
CE
CE
CE
= 0
CE
= 2.5 mA
= 0
= 0
= 0
= 5 V
= 0.3 V
= 5 V, f = 100 MHz
= 5 V
A
= 25°C, unless otherwise specified
1)
2
f
Symbol
V
V
I
I
h
V
V
V
R
R
T
CBO
EBO
FE
(BR)CEO
(BR)CBO
CEsat
i(off)
i(on)
1
1
/R
2
min.
0.6
1.5
0.9
50
50
40
1
-
-
-
-
Values
typ.
150
2.2
1
-
-
-
-
-
-
-
-
max.
100
3.5
0.3
1.5
1.8
2.9
1.1
2007-07-31
-
-
-
-
BCR553
MHz
Unit
V
nA
mA
-
V
k
-