FJV4106RMTF Fairchild Semiconductor, FJV4106RMTF Datasheet
FJV4106RMTF
Manufacturer Part Number
FJV4106RMTF
Description
TRANSISTOR PNP 50V 100MA SOT-23
Manufacturer
Fairchild Semiconductor
Datasheet
1.FJV4106RMTF.pdf
(4 pages)
Specifications of FJV4106RMTF
Transistor Type
PNP - Pre-Biased
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
10K
Resistor - Emitter Base (r2) (ohms)
47K
Dc Current Gain (hfe) (min) @ Ic, Vce
68 @ 5mA, 5V
Vce Saturation (max) @ Ib, Ic
300mV @ 500µA, 10mA
Frequency - Transition
200MHz
Power - Max
200mW
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
©2002 Fairchild Semiconductor Corporation
Switching Application
• Switching circuit, Inverter, Interface circuit, Driver Circuit
• Built in bias Resistor (R
• Complement to FJV3106R
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
Electrical Characteristics
V
V
V
I
P
T
T
BV
BV
I
h
V
C
f
V
V
R
R
C
CBO
T
FE
J
STG
Symbol
CBO
CEO
EBO
C
CE
I
I
ob
1
1
(off)
(on)
/R
CBO
CEO
Symbol
(sat)
2
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Output Capacitance
Current Gain Bandwidth Product
Input Off Voltage
Input On Voltage
Input Resistor
Resistor Ratio
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
1
=10K , R
Parameter
(Bias Resistor Built In)
2
=47K )
T
a
=25 C unless otherwise noted
T
Parameter
a
=25 C unless otherwise noted
FJV4106R
I
I
V
V
I
V
f=1.0MHz
V
V
V
C
C
C
CB
CE
CB
CE
CE
CE
= -10 A, I
= -100 A, I
= -10mA, I
= -40V, I
= -5V, I
= -10V, I
= -10V, I
= -5V, I
= -0.3V, I
Marking
Test Condition
C
C
E
E
E
C
= -5mA
B
= -100 A
R 76
=0
B
C
=0
= -0.5mA
=0
= -5mA
=0
= -1mA
Min.
0.19
-0.3
-50
Equivalent Circuit
-50
68
B
7
1. Base 2. Emitter 3. Collector
-55 ~ 150
Value
-100
200
150
3
-50
-50
-10
R1
Typ.
0.21
200
5.5
10
R2
1
Max.
0.24
-0.1
-0.3
-1.4
13
SOT-23
C
E
Units
mW
2
mA
V
V
V
Rev. A, July 2002
C
C
Units
MHz
K
pF
V
V
V
V
V
A
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FJV4106RMTF Summary of contents
Page 1
... Current Gain Bandwidth Product T V (off) Input Off Voltage I V (on) Input On Voltage I R Input Resistor Resistor Ratio 1 2 ©2002 Fairchild Semiconductor Corporation FJV4106R (Bias Resistor Built In) =47K ) 2 Marking =25 C unless otherwise noted a Parameter T =25 C unless otherwise noted a Test Condition ...
Page 2
... I [mA], COLLECTOR CURRENT C Figure 1. DC current Gain -10k -1k -100 -10 -1 -0.1 -0.3 -0.5 -0.7 -0.9 -1.1 V (off)[V], INPUT OFF VOLTAGE I Figure 3. Input Off Voltage ©2002 Fairchild Semiconductor Corporation -100 -10 -1 -0.1 -0.1 -10 -100 400 10K 350 47K 2 300 250 200 150 ...
Page 3
... Package Dimensions 0.40 0.03 2.90 0.95 0.03 1.90 ©2002 Fairchild Semiconductor Corporation SOT-23 0.40 0.03 0.96~1.14 0.10 0.95 0.03 0.508REF 0.03 0.03~0.10 0.38 REF +0.05 0.12 –0.023 Dimensions in Millimeters Rev. A, July 2002 ...
Page 4
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