FJV4108RMTF Fairchild Semiconductor, FJV4108RMTF Datasheet - Page 2

• Manufacturer Part Number: FJV4108RMTF
• Description: TRANSISTOR PNP 50V 100MA SOT-23
• Manufacturer: Fairchild Semiconductor

Specifications of FJV4108RMTF

• Transistor Type: PNP - Pre-Biased
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 47K
• Resistor - Emitter Base (r2) (ohms): 22K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 56 @ 5mA, 5V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 500µA, 10mA
• Frequency - Transition: 200MHz
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2002 Fairchild Semiconductor Corporation
Typical Characteristics
1000
-1000
100
-100
10
-10
-1
-0.6
-0.8
Figure 3. Input Off Voltage
Figure 1. DC current Gain
-1.0
I
C
V
[mA], COLLECTOR CURRENT
I
(off)[V], INPUT OFF VOLTAGE
-1.2
-10
-1.4
-1.6
-1.8
-2.0
-100
-2.2
V
R
R
V
R
R
CE
1
2
-2.4
CE
1
2
= 47K
= 22K
= - 5V
= 47K
= 22K
= - 5V
-2.6
-1000
-2.8
-100
-0.1
-10
400
350
300
250
200
150
100
50
-1
-0.1
0
0
Figure 2. Input On Voltage
25
Figure 4. Power Derating
I
C
T
[mA], COLLECTOR CURRENT
a
[
50
o
C], AMBIENT TEMPERATURE
-1
75
100
-10
125
V
R
R
CE
1
2
= 47K
= 22K
150
= - 0.3V
Rev. A, August 2002
-100
175