PDTA113ES,126 NXP Semiconductors, PDTA113ES,126 Datasheet - Page 10

• Manufacturer Part Number: PDTA113ES,126
• Description: TRANS PNP W/RES 50V TO-92
• Manufacturer: NXP Semiconductors

Specifications of PDTA113ES,126

• Transistor Type: PNP - Pre-Biased
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 1K
• Resistor - Emitter Base (r2) (ohms): 1K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 30 @ 40mA, 5V
• Vce Saturation (max) @ Ib, Ic: 150mV @ 1.5mA, 30mA
• Current - Collector Cutoff (max): 1µA
• Power - Max: 500mW
• Mounting Type: Through Hole
• Package / Case: TO-226-3, TO-92-3 (TO-226AA)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934058783126; PDTA113ES AMO; PDTA113ES AMO

NXP Semiconductors
Fig 8.
PDTA113E_SER_5
Product data sheet
Plastic single-ended leaded (through hole) package; 3 leads
DIMENSIONS (mm are the original dimensions)
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
UNIT
mm
Package outline SOT54 (SC-43A/TO-92)
VERSION
OUTLINE
SOT54
D
5.2
5.0
A
0.48
0.40
d
b
E
3
1
2
0.66
0.55
b 1
IEC
b
1
0.45
0.38
c
4.8
4.4
D
JEDEC
TO-92
1.7
1.4
d
REFERENCES
Rev. 05 — 2 September 2009
0
4.2
3.6
E
2.54
PNP resistor-equipped transistors; R1 = 1 k , R2 = 1 k
A
e
SC-43A
JEITA
scale
2.5
1.27
e 1
14.5
12.7
5 mm
L
L 1
L
max.
2.5
1
(1)
PDTA113E series
L
PROJECTION
EUROPEAN
© NXP B.V. 2009. All rights reserved.
ISSUE DATE
b
04-06-28
04-11-16
c
e 1
e
SOT54
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