PDTA113ES,126 NXP Semiconductors, PDTA113ES,126 Datasheet - Page 6

• Manufacturer Part Number: PDTA113ES,126
• Description: TRANS PNP W/RES 50V TO-92
• Manufacturer: NXP Semiconductors

Specifications of PDTA113ES,126

• Transistor Type: PNP - Pre-Biased
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 1K
• Resistor - Emitter Base (r2) (ohms): 1K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 30 @ 40mA, 5V
• Vce Saturation (max) @ Ib, Ic: 150mV @ 1.5mA, 30mA
• Current - Collector Cutoff (max): 1µA
• Power - Max: 500mW
• Mounting Type: Through Hole
• Package / Case: TO-226-3, TO-92-3 (TO-226AA)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934058783126; PDTA113ES AMO; PDTA113ES AMO

NXP Semiconductors
PDTA113E_SER_5
Product data sheet
Fig 1.
Fig 3.
V
h
(V)
I(on)
(1) T
(2) T
(3) T
(1) T
(2) T
(3) T
10
10
FE
10
10
10
1
1
2
1
1
10
10
V
DC current gain as a function of collector
current; typical values
V
On-state input voltage as a function of
collector current; typical values
CE
amb
amb
amb
CE
amb
amb
amb
1
1
= 5 V
= 0.3 V
= 100 C
= 25 C
= 40 C
= 40 C
= 25 C
= 100 C
1
1
(1)
(2)
(3)
10
10
I
I
C
C
006aaa115
(mA)
006aaa117
(mA)
(2)
(1)
(3)
Rev. 05 — 2 September 2009
10
10
2
2
PNP resistor-equipped transistors; R1 = 1 k , R2 = 1 k
Fig 2.
Fig 4.
V
V
CEsat
(V)
(V)
I(off)
10
10
(1) T
(2) T
(3) T
10
(1) T
(2) T
(3) T
10
1
1
1
2
1
10
10
I
Collector-emitter saturation voltage as a
function of collector current; typical values
V
Off-state input voltage as a function of
collector current; typical values
C
amb
amb
amb
amb
amb
amb
CE
/I
1
B
= 5 V
= 20
= 100 C
= 25 C
= 40 C
= 40 C
= 25 C
= 100 C
(1)
(2)
(3)
PDTA113E series
1
(1)
(2)
(3)
I
I
C
C
(mA)
(mA)
© NXP B.V. 2009. All rights reserved.
006aaa116
006aaa118
10
10
2
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