PDTA113ES,126 NXP Semiconductors, PDTA113ES,126 Datasheet - Page 12

• Manufacturer Part Number: PDTA113ES,126
• Description: TRANS PNP W/RES 50V TO-92
• Manufacturer: NXP Semiconductors

Specifications of PDTA113ES,126

• Transistor Type: PNP - Pre-Biased
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 1K
• Resistor - Emitter Base (r2) (ohms): 1K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 30 @ 40mA, 5V
• Vce Saturation (max) @ Ib, Ic: 150mV @ 1.5mA, 30mA
• Current - Collector Cutoff (max): 1µA
• Power - Max: 500mW
• Mounting Type: Through Hole
• Package / Case: TO-226-3, TO-92-3 (TO-226AA)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934058783126; PDTA113ES AMO; PDTA113ES AMO

NXP Semiconductors
Fig 10. Package outline SOT54 variant
PDTA113E_SER_5
Product data sheet
Plastic single-ended leaded (through hole) package; 3 leads (on-circle)
DIMENSIONS (mm are the original dimensions)
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
UNIT
mm
SOT54 variant
VERSION
OUTLINE
D
5.2
5.0
A
0.48
0.40
d
b
E
3
1
2
0.66
0.55
b 1
IEC
b
1
0.45
0.38
c
4.8
4.4
D
JEDEC
1.7
1.4
d
REFERENCES
Rev. 05 — 2 September 2009
0
4.2
3.6
E
2.54
PNP resistor-equipped transistors; R1 = 1 k , R2 = 1 k
A
e
JEITA
scale
2.5
1.27
e 1
14.5
12.7
5 mm
L
L 2
L 1
L 1
max
2.5
(1)
max
PDTA113E series
2.5
L 2
L
PROJECTION
EUROPEAN
© NXP B.V. 2009. All rights reserved.
ISSUE DATE
SOT54 variant
04-06-28
05-01-10
c
b
e 1
e 1
e
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