PDTA113ES,126 NXP Semiconductors, PDTA113ES,126 Datasheet - Page 2

• Manufacturer Part Number: PDTA113ES,126
• Description: TRANS PNP W/RES 50V TO-92
• Manufacturer: NXP Semiconductors

Specifications of PDTA113ES,126

• Transistor Type: PNP - Pre-Biased
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 1K
• Resistor - Emitter Base (r2) (ohms): 1K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 30 @ 40mA, 5V
• Vce Saturation (max) @ Ib, Ic: 150mV @ 1.5mA, 30mA
• Current - Collector Cutoff (max): 1µA
• Power - Max: 500mW
• Mounting Type: Through Hole
• Package / Case: TO-226-3, TO-92-3 (TO-226AA)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934058783126; PDTA113ES AMO; PDTA113ES AMO

NXP Semiconductors
2. Pinning information
PDTA113E_SER_5
Product data sheet
Table 3.
Pin
SOT54
1
2
3
SOT54A
1
2
3
SOT54 variant
1
2
3
SOT23, SOT323, SOT346, SOT416
1
2
3
SOT883
1
2
3
Pinning
Description
input (base)
output (collector)
GND (emitter)
input (base)
output (collector)
GND (emitter)
input (base)
output (collector)
GND (emitter)
input (base)
GND (emitter)
output (collector)
input (base)
GND (emitter)
output (collector)
Rev. 05 — 2 September 2009
PNP resistor-equipped transistors; R1 = 1 k , R2 = 1 k
Simplified outline
1
2
PDTA113E series
1
Transparent
top view
3
001aab348
006aaa144
001aab347
001aab447
2
3
3
1
2
1
2
3
1
2
3
Symbol
© NXP B.V. 2009. All rights reserved.
1
1
1
1
1
R1
R1
R1
R1
R1
R2
R2
R2
006aaa148
006aaa148
006aaa148
sym003
sym003
R2
R2
2 of 18
2
3
2
3
2
3
3
2
3
2