PDTA113ES,126 NXP Semiconductors, PDTA113ES,126 Datasheet - Page 5

• Manufacturer Part Number: PDTA113ES,126
• Description: TRANS PNP W/RES 50V TO-92
• Manufacturer: NXP Semiconductors

Specifications of PDTA113ES,126

• Transistor Type: PNP - Pre-Biased
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 1K
• Resistor - Emitter Base (r2) (ohms): 1K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 30 @ 40mA, 5V
• Vce Saturation (max) @ Ib, Ic: 150mV @ 1.5mA, 30mA
• Current - Collector Cutoff (max): 1µA
• Power - Max: 500mW
• Mounting Type: Through Hole
• Package / Case: TO-226-3, TO-92-3 (TO-226AA)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934058783126; PDTA113ES AMO; PDTA113ES AMO

NXP Semiconductors
7. Characteristics
Table 8.
T
PDTA113E_SER_5
Product data sheet
Symbol
I
I
I
h
V
V
V
R1
R2/R1
C
CBO
CEO
EBO
amb
FE
CEsat
I(off)
I(on)
c
= 25 C unless otherwise specified
Characteristics
Parameter
collector-base cut-off
current
collector-emitter
cut-off current
emitter-base cut-off
current
DC current gain
collector-emitter
saturation voltage
off-state input voltage V
on-state input voltage V
bias resistor 1 (input)
bias resistor ratio
collector capacitance
Conditions
V
V
V
T
V
V
I
V
f = 1 MHz
C
j
CB
CE
CE
EB
CE
CE
CE
CB
= 150 C
= 30 mA; I
= 5 V; I
= 50 V; I
= 30 V; I
= 30 V; I
= 5 V; I
= 5 V; I
= 300 mV; I
= 10 V; I
Rev. 05 — 2 September 2009
C
C
C
B
E
B
B
E
= 0 A
= 40 mA
= 100 A
= 0 A
= 0 A
= 0 A;
= 1.5 mA
= i
C
e
= 20 mA
PNP resistor-equipped transistors; R1 = 1 k , R2 = 1 k
= 0 A;
Min
-
-
-
-
30
-
-
0.7
0.8
-
2
PDTA113E series
Typ
-
-
-
-
-
-
1
1
-
1.3
1.7
Max
-
-
1.3
1.2
2
© NXP B.V. 2009. All rights reserved.
100
1
50
4
150
0.5
Unit
nA
mA
mV
V
V
k
pF
A
A
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