PDTA113ES,126 NXP Semiconductors, PDTA113ES,126 Datasheet - Page 16
PDTA113ES,126
Manufacturer Part Number
PDTA113ES,126
Description
TRANS PNP W/RES 50V TO-92
Manufacturer
NXP Semiconductors
Datasheet
1.PDTA113EE115.pdf
(18 pages)
Specifications of PDTA113ES,126
Transistor Type
PNP - Pre-Biased
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
1K
Resistor - Emitter Base (r2) (ohms)
1K
Dc Current Gain (hfe) (min) @ Ic, Vce
30 @ 40mA, 5V
Vce Saturation (max) @ Ib, Ic
150mV @ 1.5mA, 30mA
Current - Collector Cutoff (max)
1µA
Power - Max
500mW
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
934058783126
PDTA113ES AMO
PDTA113ES AMO
PDTA113ES AMO
PDTA113ES AMO
NXP Semiconductors
10. Revision history
Table 10.
PDTA113E_SER_5
Product data sheet
Document ID
PDTA113E_SER_5
Modifications:
PDTA113E_SER_4
PDTA113ET_3
PDTA113ET_2
PDTA113ET_1
Revision history
Release date
20090902
20050405
20040720
20040415
20040316
•
•
•
•
•
This data sheet was changed to reflect the new company name NXP Semiconductors,
including new legal definitions and disclaimers. No changes were made to the technical
content.
Figure 5 “Package outline SOT416 (SC-75)”
Figure 6 “Package outline SOT346 (SC-59A/TO-236)”
Figure 11 “Package outline SOT23 (TO-236AB)”
Figure 12 “Package outline SOT323 (SC-70)”
Rev. 05 — 2 September 2009
Data sheet status
Product data sheet
Product data sheet
Objective data sheet
Objective data sheet
Objective data sheet
PNP resistor-equipped transistors; R1 = 1 k , R2 = 1 k
Change notice
-
-
-
-
-
updated
updated
updated
PDTA113E series
updated
Supersedes
PDTA113E_SER_4
PDTA113ET_3
PDTA113ET_2
PDTA113ET_1
-
© NXP B.V. 2009. All rights reserved.
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