PDTA113ES,126 NXP Semiconductors, PDTA113ES,126 Datasheet - Page 16

• Manufacturer Part Number: PDTA113ES,126
• Description: TRANS PNP W/RES 50V TO-92
• Manufacturer: NXP Semiconductors

Specifications of PDTA113ES,126

• Transistor Type: PNP - Pre-Biased
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 1K
• Resistor - Emitter Base (r2) (ohms): 1K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 30 @ 40mA, 5V
• Vce Saturation (max) @ Ib, Ic: 150mV @ 1.5mA, 30mA
• Current - Collector Cutoff (max): 1µA
• Power - Max: 500mW
• Mounting Type: Through Hole
• Package / Case: TO-226-3, TO-92-3 (TO-226AA)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934058783126; PDTA113ES AMO; PDTA113ES AMO

NXP Semiconductors
10. Revision history
Table 10.
PDTA113E_SER_5
Product data sheet
Document ID
PDTA113E_SER_5
Modifications:
PDTA113E_SER_4
PDTA113ET_3
PDTA113ET_2
PDTA113ET_1
Revision history
Release date
20090902
20050405
20040720
20040415
20040316
•
•
•
•
•
This data sheet was changed to reflect the new company name NXP Semiconductors,
including new legal definitions and disclaimers. No changes were made to the technical
content.
Figure 5 “Package outline SOT416 (SC-75)”
Figure 6 “Package outline SOT346 (SC-59A/TO-236)”
Figure 11 “Package outline SOT23 (TO-236AB)”
Figure 12 “Package outline SOT323 (SC-70)”
Rev. 05 — 2 September 2009
Data sheet status
Product data sheet
Product data sheet
Objective data sheet
Objective data sheet
Objective data sheet
PNP resistor-equipped transistors; R1 = 1 k , R2 = 1 k
Change notice
-
-
-
-
-
updated
updated
updated
PDTA113E series
updated
Supersedes
PDTA113E_SER_4
PDTA113ET_3
PDTA113ET_2
PDTA113ET_1
-
© NXP B.V. 2009. All rights reserved.
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