BCR 112L3 E6327 Infineon Technologies, BCR 112L3 E6327 Datasheet - Page 2

• Manufacturer Part Number: BCR 112L3 E6327
• Description: TRANSISTOR NPN DGTL AF TSLP-3
• Manufacturer: Infineon Technologies

Specifications of BCR 112L3 E6327

• Transistor Type: NPN - Pre-Biased
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 4.7K
• Resistor - Emitter Base (r2) (ohms): 4.7K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 20 @ 5mA, 5V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 500µA, 10mA
• Frequency - Transition: 140MHz
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Package / Case: TSLP-3-4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BCR112L3E6327XT; SP000014852

Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Input on voltage
Collector current
Total power dissipation-
BCR112, T
BCR112F, T
BCR112L3, T
BCR112T, T
BCR112U, T
BCR112W, T
Junction temperature
Storage temperature
Thermal Resistance
Parameter
Junction - soldering point
BCR112
BCR112F
BCR112L3
BCR112T
BCR112U
BCR112W
1 For calculation of R
S
S
S
S
S
S
102°C
128°C
109°C
118°C
124°C
135°C
thJA
please refer to Application Note Thermal Resistance
1)
2
Symbol
V
V
V
V
I
P
T
T
Symbol
R
C
j
stg
CEO
CBO
EBO
i(on)
tot
thJS
-65 ... 150
Value
Value
200
250
250
250
250
250
100
150
50
50
10
15
240
165
133
105
90
60
Aug-29-2003
BCR112...
Unit
V
mA
mW
°C
Unit
K/W