BTS410E2E3062ANT Infineon Technologies, BTS410E2E3062ANT Datasheet - Page 6

BTS410E2E3062ANT

Manufacturer Part Number
BTS410E2E3062ANT
Description
Manufacturer
Infineon Technologies
Datasheet

Specifications of BTS410E2E3062ANT

Switch Type
High Side
Power Switch Family
BTS 410 E2
Input Voltage
-0.5 to 6V
Power Switch On Resistance
190mOhm
Output Current
1.6A
Number Of Outputs
Single
Mounting
Surface Mount
Supply Current
1mA
Package Type
TO-220AB SMD
Operating Temperature (min)
-40C
Operating Temperature (max)
150C
Operating Temperature Classification
Automotive
Pin Count
4 +Tab
Power Dissipation
50W
Lead Free Status / RoHS Status
Not Compliant
Truth Table
L = "Low" Level
H = "High" Level
Terms
13
14
15
Semiconductor Group
Normal
operation
Open load
Short circuit
to GND
Short circuit
to V
Overtem-
perature
Under-
voltage
Overvoltage
) Power Transistor off, high impedance, versions BTS 410H, BTS 412B: internal pull up current source for
) Low resistance short V
) No current sink capability during undervoltage shutdown
V
bb
open load detection.
bb
V
IN
I IN
V ST
I ST
2
4
Input-
level
IN
ST
H
H
H
H
H
H
H
L
L
L
L
L
L
L
R
X = don't care
GND
Status signal after the time delay shown in the diagrams (see fig 5. page 12...13)
PROFET
GND
bb
3
1
V
Output
bb
level
I bb
to output may be detected in ON-state by the no-load-detection
13 )
I GND
H
H
H
H
L
L
L
L
L
L
L
L
L
OUT
5
I L
412
L
L
B2
H
H
H
H
H
L
L
L
L
L
15)
15)
L
L
Z = high impedance, potential depends on external circuit
V OUT
V ON
Status
H (L
410
L
L
D2
H
H
H
H
H
15)
15)
L
L
L
L
L
L
6
14)
Input circuit (ESD protection)
ZD
voltage clamp at DC conditions. Operation in this mode
may result in a drift of the zener voltage (increase of up
to 1 V).
)
I1
H (L
E2/F2
6 V typ., ESD zener diodes are not to be used as
410
H
H
H
H
H
H
H
H
H
L
L
L
L
14)
)
IN
H (L
ZD
410
G2
H
H
H
H
H
H
H
H
H
H
ESD-
L
L
L
R
I1
14)
I
ZD
)
I2
GND
410
H2
H
H
H
H
H
H
H
H
H
L
L
L
L
L
I
I
BTS 410 E2
2003-Oct-01

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