BTS3408GXT Infineon Technologies, BTS3408GXT Datasheet - Page 11

• Manufacturer Part Number: BTS3408GXT
• Manufacturer: Infineon Technologies

Specifications of BTS3408GXT

• Switch Type: Low Side
• Power Switch Family: BTS3408G
• Input Voltage: -0.3 to 7V
• Power Switch On Resistance: 550mOhm
• Output Current: 550mA
• Number Of Outputs: Dual
• Mounting: Surface Mount
• Supply Current: 1.5mA
• Package Type: DSO
• Operating Temperature (min): -40C
• Operating Temperature (max): 150C
• Operating Temperature Classification: Automotive
• Pin Count: 8
• Power Dissipation: 880mW
• Lead Free Status / RoHS Status: Compliant

Conducted Emissions
Acc. IEC 61967-4 (1Ω/150Ω method)
Typ. OUT
with 150Ω-matching network
Figure 4
1)
Datasheet Rev. 1.3
V
BB
100
For defined decoupling and high reproducibility a
defined choke (5µH at 1 MHz) is inserted between
Vbb and Out-Pin.
-10
-20
90
80
70
60
50
40
30
20
10
0
0,1
5V
3408
FAULT
IN1
IN2
ENA
x
Emissions at PWM-mode
VS
1
GND
Test circuit for conducted
emission
OUT2
OUT1
f / MHz
10
1)
150Ω-Network
150Ω-Network
100
R
L1
Noise
OUT1
OUT2
150ohm Class1
150ohm Class6
150Ω / 8-H
150Ω / 13-N
R
L2
1000
11
Conducted Susceptibility
Acc. I47A/658/CD IEC 62132-4 (Direct
Power Injection)
Direct Power Injection: Forward Power
CW
Failure Criteria: Amplitude or frequency
variation max. 10% at OUT
Typ. OUT
and at PWM
Figure 5
2)
40
35
30
25
20
15
10
Broadband Artificial Network (short BAN) consists
of the same choke (5µH at 1 MHz) and the same
150ohm-matching
measurement for defined decoupling and high
reproducibility.
5
0
1
V
BB
5V
3408
FAULT
IN1
IN2
ENA
x
Susceptibility at DC-ON/OFF
VS
GND
Test circuit for conducted
susceptibility
10
OUT2
OUT1
network
HITFET
f / MHz
B
A
N
as
100

R
2)
BTS3408G
L1
HF
HF
for
2008-01-09
B
N
A
Limit
OUT2, ON
OUT2, OFF
OUT2, PWM
emission
R
L2
1000